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181026t20192019enk ob 001 0 eng d |
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|a N$T
|b eng
|e rda
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|c N$T
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|d OPELS
|d YDX
|d OCLCF
|d MERER
|d D6H
|d OCLCQ
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|d OCLCO
|d LVT
|d OCLCO
|d OCLCQ
|d OCLCO
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|d OCLCQ
|d SFB
|d OCLCQ
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|a 1105175616
|a 1105566543
|a 1229532364
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|a 9780081023075
|q (electronic bk.)
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|a 0081023073
|q (electronic bk.)
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|a 0081023065
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|a 9780081023068
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|z 9780081023068
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|a (OCoLC)1059124775
|z (OCoLC)1105175616
|z (OCoLC)1105566543
|z (OCoLC)1229532364
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|a TK7871.85
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|a TEC
|x 008090
|2 bisacsh
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0 |
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|a 621.38152
|2 23
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0 |
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|a Wide bandgap semiconductor power devices :
|b materials, physics, design, and applications /
|c edited by B. Jayant Baliga.
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|a Duxford, United Kingdom :
|b Woodhead Publishing, an imprint of Elsevier,
|c [2019]
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|c �2019
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300 |
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|a 1 online resource
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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490 |
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|a Woodhead Publishing series in electronic and optical materials
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|a Includes bibliographical references and index.
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|a Online resource; title from PDF title page (EBSCO, viewed October 30, 2018).
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|a 1. Introduction -- 2. SiC material properties -- 3. Physical properties of gallium nitride and related III-V nitrides -- 4. SiC power device design and fabrication -- 5. GaN smart power devices and integrated circuits -- 6. GaN-on-GaN power device design and fabrication -- 7. Gate drivers for wide bandgap power devices -- 8. Applications of GaN power devices -- 9. Applications of SiC devices -- 10. Synopsys.
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520 |
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|a Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Key Features: Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications. Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability. Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact.--Provided by publisher.
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650 |
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|a Power semiconductors.
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650 |
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|a Wide gap semiconductors.
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|a Semi-conducteurs de puissance.
|0 (CaQQLa)201-0318261
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|a Semi-conducteurs �a large bande interdite.
|0 (CaQQLa)201-0318282
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650 |
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Semiconductors.
|2 bisacsh
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650 |
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7 |
|a Power semiconductors.
|2 fast
|0 (OCoLC)fst01074382
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650 |
|
7 |
|a Wide gap semiconductors.
|2 fast
|0 (OCoLC)fst01174923
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700 |
1 |
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|a Baliga, B. Jayant,
|d 1948-
|e editor.
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830 |
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|a Woodhead Publishing series in electronic and optical materials.
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856 |
4 |
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|u https://sciencedirect.uam.elogim.com/science/book/9780081023068
|z Texto completo
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