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CMOS past, present and future /

Annotation

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Radamson, Henry H.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Duxford : Woodhead Publishing, 2018.
Colección:Woodhead Publishing series in electronic and optical materials.
Temas:
Acceso en línea:Texto completo

MARC

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082 0 4 |a 537.6/223  |2 23 
245 0 0 |a CMOS past, present and future /  |c Henry H. Radamson [and others]. 
260 |a Duxford :  |b Woodhead Publishing,  |c 2018. 
300 |a 1 online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Woodhead Publishing series in electronic and optical materials 
500 |a Includes index. 
588 0 |a Print version record. 
505 0 |a 1. Brief introduction CMOS applications in our daily life; 2. Basic definitions and equations; 3. Electrical measurements (IV, short channel effects, mobility and noise); 4. CMOS Architecture; 5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners); 6. High-k and metal gate (Almost all known high-k materials and metal gates); 7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds); 8. Contacts (Silicide formation, contact resistance, parasitic contacts); 9. Integration with photonic components (CMOS with lasers, detectors); 10. Technology roadmap (starting from 50's to unknown future); 11. Authors' final words. 
520 8 |a Annotation  |b 'CMOS Past, Present and Future' provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterisation, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. 
650 0 |a Metal oxide semiconductors, Complementary. 
650 6 |a MOS compl�ementaires.  |0 (CaQQLa)201-0047869 
650 7 |a SCIENCE  |x Physics  |x Electricity.  |2 bisacsh 
650 7 |a SCIENCE  |x Physics  |x Electromagnetism.  |2 bisacsh 
650 7 |a Metal oxide semiconductors, Complementary  |2 fast  |0 (OCoLC)fst01017635 
700 1 |a Radamson, Henry H. 
776 0 8 |i Print version:  |z 0081021399  |z 9780081021392  |w (OCoLC)1001545172 
830 0 |a Woodhead Publishing series in electronic and optical materials. 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780081021392  |z Texto completo 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780081021392  |z Texto completo