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180409s2018 enk o 001 0 eng d |
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|a YDX
|b eng
|e pn
|c YDX
|d OPELS
|d NLE
|d OCLCF
|d STF
|d N$T
|d MERER
|d OCLCQ
|d D6H
|d OCLCQ
|d INT
|d OCLCQ
|d U3W
|d LVT
|d OCLCQ
|d LQU
|d UKAHL
|d S2H
|d OCLCO
|d UX1
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|a 1030967079
|a 1031663980
|a 1105173462
|a 1105566535
|a 1151735431
|a 1229752573
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|a 9780081021408
|q (electronic bk.)
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|a 0081021402
|q (electronic bk.)
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|z 0081021399
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|z 9780081021392
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|a (OCoLC)1030910731
|z (OCoLC)1030967079
|z (OCoLC)1031663980
|z (OCoLC)1105173462
|z (OCoLC)1105566535
|z (OCoLC)1151735431
|z (OCoLC)1229752573
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|a TK7871.99.M44
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|a SCI
|x 021000
|2 bisacsh
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|a SCI
|x 022000
|2 bisacsh
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|a 537.6/223
|2 23
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|a CMOS past, present and future /
|c Henry H. Radamson [and others].
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|a Duxford :
|b Woodhead Publishing,
|c 2018.
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|a 1 online resource.
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336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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490 |
1 |
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|a Woodhead Publishing series in electronic and optical materials
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|a Includes index.
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|a Print version record.
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|a 1. Brief introduction CMOS applications in our daily life; 2. Basic definitions and equations; 3. Electrical measurements (IV, short channel effects, mobility and noise); 4. CMOS Architecture; 5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners); 6. High-k and metal gate (Almost all known high-k materials and metal gates); 7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds); 8. Contacts (Silicide formation, contact resistance, parasitic contacts); 9. Integration with photonic components (CMOS with lasers, detectors); 10. Technology roadmap (starting from 50's to unknown future); 11. Authors' final words.
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|a Annotation
|b 'CMOS Past, Present and Future' provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterisation, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
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|a Metal oxide semiconductors, Complementary.
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650 |
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|a MOS compl�ementaires.
|0 (CaQQLa)201-0047869
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650 |
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|a SCIENCE
|x Physics
|x Electricity.
|2 bisacsh
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650 |
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|a SCIENCE
|x Physics
|x Electromagnetism.
|2 bisacsh
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650 |
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|a Metal oxide semiconductors, Complementary
|2 fast
|0 (OCoLC)fst01017635
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700 |
1 |
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|a Radamson, Henry H.
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776 |
0 |
8 |
|i Print version:
|z 0081021399
|z 9780081021392
|w (OCoLC)1001545172
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830 |
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|a Woodhead Publishing series in electronic and optical materials.
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856 |
4 |
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|u https://sciencedirect.uam.elogim.com/science/book/9780081021392
|z Texto completo
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|u https://sciencedirect.uam.elogim.com/science/book/9780081021392
|z Texto completo
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