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Doherty power amplifiers : from fundamentals to advanced design methods /

Annotation

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Kim, Bumman (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London : Academic Press, [2018]
Temas:
Acceso en línea:Texto completo

MARC

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100 1 |a Kim, Bumman,  |e author. 
245 1 0 |a Doherty power amplifiers :  |b from fundamentals to advanced design methods /  |c Bumman Kim. 
264 1 |a London :  |b Academic Press,  |c [2018] 
300 |a 1 online resource (ix, 174 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
588 0 |a Online resource; title from PDF title page (EBSCO, viewed April 4, 2018). 
505 0 |a Front Cover; Doherty Power Amplifiers: From Fundamentals to Advanced Design Methods; Copyright; Contents; Acknowledgments; Chapter One: Introduction to Doherty Power Amplifier; 1.1. Historical Survey; 1.2. Basic Operation Principle; 1.2.1. Load Modulation Behavior; 1.2.1.1. Load Impedance Modulation; 1.2.1.2. Voltage, Current, and Load Impedance Profiles; 1.2.1.3. Load Lines for the Modulated Loads; 1.2.2. Efficiency and Gain Characteristics; 1.2.2.1. Efficiency; 1.2.2.2. Gain; 1.3. Offset Line Technique; 1.3.1. Realization of Doherty Amplifier; 1.3.2. Operation of the Offset Line. 
505 8 |a 1.3.2.1. Offset Line at Carrier Amplifier1.3.2.2. Offset Line at Peaking Amplifier; 1.4. Other Load Modulation Methods; 1.4.1. Voltage Combined Doherty Amplifier; 1.4.1.1. Series Configured Doherty Amplifier in Voltage Combining Mode; 1.4.1.2. Transformer Based Power Amplifier; 1.4.1.3. Transformer Based Voltage Combined Doherty Amplifier; 1.4.2. Inverted Load Modulation; 1.4.3. Direct Matching at the First Peak Efficiency Point; 1.4.3.1. Using ROPT/2 Inverter; 1.4.3.2. Using 2ROPT Inverter; Further Reading; Chapter Two: Realization of Proper Load Modulation Using a Real Transistor. 
505 8 |a 2.1. Correction for Lower Current of Peaking Amplifier2.1.1. Uneven Drive Through Coupler; 2.1.1.1. Current Ratio of Peaking Amplifier Versus Carrier Amplifier; 2.1.1.2. Efficiency of the Asymmetric Amplifier With Uneven Power Drive; 2.1.2. Gate Bias Adaptation to Compensate the Low Current of Peaking Amplifier; 2.1.2.1. Peaking Amplifier Adaptation; 2.1.2.2. Adaptation of the Both Amplifiers; 2.2. Knee Voltage Effect on Doherty Amplifier Operation; 2.2.1. Doherty Amplifier Operation With Knee Voltage; 2.2.2. Load Modulation Behavior of Doherty Amplifier With Optimized Carrier Amplifier. 
505 8 |a 2.3. Offset Line Design for Compensation of Peaking Amplifier Phase Variation2.3.1. Phase Variation of the Peaking Amplifier; 2.3.2. Load Modulation of Peaking Amplifier With the Additional Offset Lines; 2.3.3. The Load Modulation of the Carrier Amplifier With the Additional Offset Lines; 2.3.4. Simulation Results With Real Device; Further Reading; Chapter Three: Enhancement of Doherty Amplifier; 3.1. Doherty Amplifier With Asymmetric Vds; 3.2. Optimized Design of GaN HEMT Doherty Power Amplifier With High Gain and High Efficiency; 3.2.1. Optimized Design of Carrier and Peaking Amplifiers. 
505 8 |a 3.2.2. Operation of the Optimally Matched Doherty Amplifier3.3. Optimized Peaking Amplifier Design for Doherty Amplifier; 3.3.1. Optimized Design of Peaking Amplifier for Proper Doherty Operation; 3.3.2. Simulation and Experimental Results; 3.4. Saturated Doherty Amplifier; 3.4.1. Operational Principle of the Saturated Doherty Amplifier; 3.4.2. Efficiency and Linearity of the Saturated Doherty Amplifier; 3.4.2.1. Efficiency of the Saturated Doherty Amplifier; 3.4.2.2. Linearity of the Saturated Doherty Amplifier; 3.4.3. Improved Harmonic Control Circuit for Saturated Amplifier. 
520 8 |a Annotation  |b Doherty Power Amplifiers: From Fundamentals to Advanced Design Methods is a great resource for both RF and microwave engineers and graduate students who want to understand and implement the technology into future base station and mobile handset systems. The book introduces the very basic operational principles of the Doherty Amplifier and its non-ideal behaviors. The different transconductance requirements for carrier and peaking amplifiers, reactive element effect, and knee voltage effect are described. In addition, several methods to correct imperfections are introduced, such as uneven input drive, gate bias adaptation, dual input drive and the offset line technique. Advanced design methods of Doherty Amplifiers are also explained, including multistage/multiway Doherty power amplifiers which can enhance the efficiency of the amplification of a highly-modulated signal. Other covered topics include signal tracking operation which increases the dynamic range, highly efficient saturated amplifiers, and broadband amplifiers, amongst other comprehensive, related topics. 
650 0 |a Power amplifiers. 
650 0 |a Amplifiers, Radio frequency. 
650 6 |a Amplificateurs de puissance.  |0 (CaQQLa)201-0186663 
650 6 |a Amplificateurs haute fr�equence.  |0 (CaQQLa)201-0288416 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a Amplifiers, Radio frequency  |2 fast  |0 (OCoLC)fst00808021 
650 7 |a Power amplifiers  |2 fast  |0 (OCoLC)fst01074236 
776 0 8 |i Print version:  |a Kim, Bumman.  |t Doherty power amplifiers.  |d London : Academic Press, [2018]  |z 0128098678  |z 9780128098677  |w (OCoLC)1010588196 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780128098677  |z Texto completo