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Elements of structures and defects of crystalline materials /

Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. P...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Fang, Tsang-Tse, 1955- (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Amsterdam, Netherlands ; Cambridge, MA, United States : Elsevier, [2018]
Temas:
Acceso en línea:Texto completo

MARC

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100 1 |a Fang, Tsang-Tse,  |d 1955-  |e author. 
245 1 0 |a Elements of structures and defects of crystalline materials /  |c Tsang-Tse Fang. 
264 1 |a Amsterdam, Netherlands ;  |a Cambridge, MA, United States :  |b Elsevier,  |c [2018] 
300 |a 1 online resource 
336 |a text  |b txt  |2 rdacontent 
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338 |a online resource  |b cr  |2 rdacarrier 
505 0 |a Front Cover; Elements of Structures and Defects of Crystalline Materials; Copyright Page; Contents; Preface; Acknowledgements; I. Structures of the Crystalline Materials; 1 The Electron Configuration of Atoms; 1.1 Atoms With a Single Electron; 1.2 Atoms With More Than One Electron; 1.2.1 Penetration and Shielding; 1.2.2 Energetic d-Orbital Collapse of Free Neutral Atoms at the Beginning of the Transition Rows; 2 Bonding Within Crystal Structures; 2.1 Bonding in Ionic Crystals; 2.1.1 Energy for Forming the Ions From Neutral Atoms; 2.1.2 Thermodynamic Viewpoint of Bond Energy. 
505 8 |a 2.1.2.1 Electrostatic Energy2.1.2.2 Repulsive Energy; 2.1.2.3 Approximation of Lattice Energy and Forces Between Ions in an Ionic Crystal; 2.1.2.4 van der Waals Attractive Energy; 2.1.2.4.1 Field Produced by a Dipole; 2.1.2.4.2 Induced Dipoles; 2.1.2.5 Zero-Point Energy; 2.1.2.6 The Born-Haber Cycle; 2.2 Covalent Bonds; 2.2.1 Formation Energy and Mechanism of Covalent Bonding; 2.3 Metallic Bonds; 2.3.1 Cohesive Energy of Metals; 2.4 Effect of Bonding on the Material Properties by Means of the Potential-Well Concept; 2.4.1 Elastic Modulus; 2.4.2 Melting Temperatures; 2.4.3 Thermal Property. 
505 8 |a 3 The Structures of Crystalline Crystals3.1 Arrangements of Atoms and Ions in Crystalline Solids: Space Lattice; 3.2 Metallic Structures; 3.3 Ionic Structures; 3.3.1 Pauling's Rules; 3.3.1.1 Pauling's First Rule; 3.3.1.2 Pauling's Second Rule (Electrostatic Valence Rule); 3.3.1.3 Pauling's Third Rule; 3.3.1.4 Pauling's Fourth Rule; 3.3.1.5 Pauling's Fifth Rule (The Rule of Parsimony); 3.4 Structural Distortion in Ionic Structures; 3.4.1 Effects of Crystal Field on the Structures of the Oxides; 3.4.1.1 Crystal Field in an Octahedral Coordination. 
505 8 |a 3.4.1.2 Crystal Field in a Tetrahedral Coordination3.4.2 Crystal Field Stabilization Energy; 3.4.3 Effects of the d Electron Configuration on the Radii of Transition Metal Ions; 3.4.4 Jahn-Teller Distortions; 3.4.4.1 The Jahn-Teller Effect in the Octahedral Field; 3.4.4.2 Effects of the Jahn-Teller Distortions on the Bond Length; 3.4.4.3 The Jahn-Teller Effect in the Tetrahedral Field; 3.4.5 Structure Distortions Arising From Asymmetric Electron Density or Inert Pair Effect; 3.5 Structure of Material Technological Interest; 3.5.1 Structure and the Related Feature of ZnO. 
505 8 |a 3.5.2 Structure and the Related Feature of SiC3.5.3 Structure and the Related Feature of TiO2; 3.5.4 Structure and the Related Feature of ZrO2; 3.5.5 Structure and the Related Feature of Spinel (AB2O4); 3.5.5.1 LiMn2O4; 3.5.5.2 Magnetite; 3.5.6 Structure and the Related Feature of Perovskite ABO3; a. Size Effects; b. The Effect of Defect (Anion Deficiency); c. Jahn-Teller Effects; 3.5.6.1 BiFeO3; 3.5.6.2 Sr2FeMoO6; 3.5.6.3 Manganite; 3.5.6.4 LaBa2Cu3O7 and YBa2Cu3O7-x; 3.5.6.5 CaCu3Ti4O12; 3.5.6.6 SrBaNb2O6; II. Defects of Crystalline Materials; 4 Point Defects in Crystalline Materials. 
520 |a Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. Part One deals with structures, while Part Two covers defects. Since the knowledge of the electron configuration of elements is necessary for understanding the nature of chemical bonding, it is discussed in the opening chapter. Chapter Two then describes the bonding formation within the crystal structures of varied materials, with Chapter Three delving into how a material's structure is formed. In view of the importance of the effects of the structure distortion on the material properties due to the fields, the related topics have been included in section 3.4. Moreover, several materials still under intensive investigation have been illustrated to provide deep insights into understanding the effects of the relationships of processing, structures and defects on the material properties. The defects of materials are explored in Part II. Chapter 4 deals with the point defects of metal and ceramics. Chapter 5 covers the fundamentals of the characteristics of dislocations, wherein physics and the atomic mechanics of several issues have been described in detail. In view of the significant influence of the morphologies including size, shape and distribution of grains, phases on the microstructure evolution, and, in turn, the properties of materials, the final chapter focuses on the fundamentals of interface energies, including single phase (grain) boundary and interphase boundary. 
588 0 |a Online resource; title from digital title page (viewed on May 01, 2018). 
504 |a Includes bibliographical references. 
650 0 |a Crystals  |x Structure. 
650 0 |a Crystals  |x Defects. 
650 6 |a Cristaux  |0 (CaQQLa)201-0028162  |x Structure.  |0 (CaQQLa)201-0376874 
650 6 |a Cristaux  |x D�efauts.  |0 (CaQQLa)201-0022122 
650 7 |a SCIENCE  |x Physics  |x Crystallography.  |2 bisacsh 
650 7 |a Crystals  |x Defects.  |2 fast  |0 (OCoLC)fst00884675 
650 7 |a Crystals  |x Structure.  |2 fast  |0 (OCoLC)fst00884694 
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