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Plasma etching processes for CMOS device realization /
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London, UK : Kidlington, Oxford, UK :
ISTE Press ; Elsevier,
2017.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Plasma Etching Processes for CMOS Device Realization; Copyright; Contents; Preface; 1 CMOS Devices Through the Years; 1.1. Scaling law by Dennard; 1.2. CMOS device improvement through the years; 1.3. Summary; 1.4. What is coming next?; 1.5. Bibliography; 2 Plasma Etching in Microelectronics; 2.1. Overview of plasmas and plasma etch tools; 2.2. Plasma surface interactions during plasma etching; 2.3. Patterns transfer by plasma etching; 2.4. Conclusion; 2.5. Bibliography; 3 Patterning Challenges in Microelectronics; 3.1. Optical immersion lithography.
- 3.2. Next-generation lithography3.3. Coclusion; 3.4. Bibliography; 4 Plasma Etch Challenges for Gate Patterning; 4.1. pSi gate etching; 4.2. Metal gate etching; 4.3. Stopping on the gate oxide; 4.4. High-k dielectric etching; 4.5. Line width roughness transfer during gate patterning; 4.6. Chamber wall consideration after gate patterning; 4.7. Summary; 4.8. Bibliography; List of Acronyms; List of Authors; Index; Back Cover.