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Materials and Processes for Next Generation Lithography.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Robinson, Alex (Editor ), Lawson, Richard (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Amsterdam, Netherlands : Elsevier, 2016.
Colección:Frontiers of nanoscience ; v. 11.
Temas:
Acceso en línea:Texto completo
Texto completo

MARC

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245 0 0 |a Materials and Processes for Next Generation Lithography. 
260 |a Amsterdam, Netherlands :  |b Elsevier,  |c 2016. 
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490 1 |a Frontiers of nanoscience,  |x 1876-2778 ;  |v v. 11 
505 0 |a Front Cover; Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography; Frontiers of Nanoscience; Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography; Copyright; Contents; Contributors; Preface; Acknowledgments; List of abbreviations; 1 -- Overview of materials and processes for lithography; 1.1 INTRODUCTION; 1.2 OVERVIEW OF LITHOGRAPHY PROCESS; 1.3 LITHOGRAPHIC EXPOSURE SOURCES AND PROCESSES; 1.3.1 Ultraviolet Lithography; 1.3.2 DUV Lithography-248nm and 193nm, Immersion, and Multiple Patterning; 1.3.3 Extreme Ultraviolet Lithography. 
505 8 |a 1.3.4 E-Beam Lithography1.3.5 Other Lithography Processes-Ion Beam, Scanning Probe, and Nanoimprint; 1.4 CHARACTERIZATION AND FIGURES OF MERIT FOR RESISTS; 1.5 RESIST MATERIALS AND CHEMISTRY; 1.5.1 Nonchemically Amplified Resists; 1.5.2 Chemically Amplified Resists; 1.5.3 Resist Physical Properties and Etch Resistance; 1.5.4 Photoacid Generator Chemistry and Physics; 1.5.5 Molecular Resists and Inorganic Resists; 1.6 CHALLENGES IN MODERN RESIST DESIGN; 1.6.1 Exposure Statistics and Shot Noise; 1.6.2 Photoacid Diffusion; 1.6.3 Resolution, Line Edge Roughness, and Sensitivity Trade-off. 
505 8 |a 1.6.4 Pattern Collapse1.7 CONCLUSIONS; REFERENCES; 2 -- Molecular excitation and relaxation of extreme ultraviolet lithography photoresists; 2.1 INTRODUCTION; 2.2 EXTREME ULTRAVIOLET MOLECULAR EXCITATION; 2.2.1 Atomic Photoemission; 2.2.2 Extreme Ultraviolet Sensitivity; 2.2.3 Gas-Phase Molecular Spectroscopy; 2.2.4 Molecular Photoemission; 2.2.5 Photoemission and Shake-Up; 2.2.6 Molecular Shape Resonances; 2.3 EXTREME ULTRAVIOLET MOLECULAR RELAXATION; 2.3.1 Electronic Relaxation in Atoms; 2.3.2 Resonant Photoabsorption; 2.3.3 Atomic Relaxation and Fragmentation in Molecules. 
505 8 |a 2.4 EXTREME ULTRAVIOLET PROCESSES IN CONDENSED FILMS2.4.1 Extreme Ultraviolet Molecular Excitation in Condensed Resist Films; 2.4.2 Molecular Relaxation in Condensed Films; 2.4.3 Reaction Cascades in Condensed Films; 2.5 OUTLOOK AND CONCLUSIONS; 2.5.1 Differences in Extreme Ultraviolet Lithography and Electron Beam Lithography; 2.5.2 Outlook and Research Needs; Acknowledgments; REFERENCES; 3 -- Theory: electron-induced chemistry; 3.1 INTRODUCTION; 3.2 MECHANISMS FOR ELECTRON-INDUCED REACTIONS; 3.2.1 Electron Attachment; 3.2.2 Electron Impact Ionization; 3.2.3 Electron Impact Excitation. 
505 8 |a 3.3 POTENTIAL ROLE IN LITHOGRAPHY3.3.1 Cross Section; 3.3.2 Spatial Resolution; 3.3.3 Rational Design of Novel Materials; 3.4 CONCLUSIONS; REFERENCES; 4 -- EUV lithography process challenges; 4.1 INTRODUCTION; 4.2 EUV-IL AS A CHARACTERIZATION AND NANOPATTERNING TOOL; 4.2.1 Extreme Ultraviolet Interference Lithography; 4.2.2 Achromatic Diffraction Grating-Based EUV-IL; 4.2.3 EUV-IL Challenges; 4.2.4 Achromatic Talbot Lithography; 4.3 RESIST MATERIAL CHALLENGES; 4.3.1 Introduction to Chemically Amplified Resists; 4.3.2 RLS Tradeoff; 4.3.3 Resist Absorption; 4.3.4 Image Blur. 
650 0 |a Microlithography. 
650 0 |a Photoresists. 
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650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
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700 1 |a Robinson, Alex,  |e editor. 
700 1 |a Lawson, Richard,  |e editor. 
776 0 8 |i Print version:  |t Materials and Processes for Next Generation Lithography.  |d Amsterdam, Netherlands : Elsevier, 2016  |z 9780081003541  |z 0081003544  |w (OCoLC)950449855 
830 0 |a Frontiers of nanoscience ;  |v v. 11. 
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856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780081003541  |z Texto completo