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Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics /
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconduct...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cambridge :
Woodhead Publishing,
2016.
|
| Colección: | Woodhead Publishing series in electronic and optical materials ;
no. 87. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Rare earth and transition metal doping of semiconductor materials : |b synthesis, magnetic properties and room temperature spintronics / |c edited by Volkmar Dierolf, Ian Ferguson, John M. Zavada. |
| 260 | |a Cambridge : |b Woodhead Publishing, |c 2016. | ||
| 300 | |a 1 online resource (472 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Woodhead Publishing Series in Electronic and Optical Materials ; |v no. 87 | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One -- Theory of magnetism in III-V semiconductors; 1 -- Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature. | |
| 505 | 8 | |a 1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References. | |
| 505 | 8 | |a 2 -- Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism. | |
| 505 | 8 | |a 2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN. | |
| 505 | 8 | |a 2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References. | |
| 505 | 8 | |a 3 -- Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles. | |
| 520 | |a Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devicesAnalyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronicsDetails the properties of semiconductors for spintronics. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Doped semiconductors. | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Semi-conducteurs dop�es. |0 (CaQQLa)201-0318285 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Doped semiconductors |2 fast |0 (OCoLC)fst00896935 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 700 | 1 | |a Dierolf, Volkmar, |d 1960- | |
| 700 | 1 | |a Ferguson, Ian T. | |
| 700 | 1 | |a Zavada, J. M. | |
| 776 | 0 | 8 | |i Print version: |a Dierolf, Volkmar. |t Rare Earth and Transition Metal Doping of Semiconductor Materials : Synthesis, Magnetic Properties and Room Temperature Spintronics. |d : Elsevier Science, �2016 |z 9780081000410 |
| 830 | 0 | |a Woodhead Publishing series in electronic and optical materials ; |v no. 87. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780081000410 |z Texto completo |