The IGBT Device : Physics, Design and Applications of the Insulated Gate Bipolar Transistor /

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The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent li...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Baliga, B. Jayant, 1948- (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Kidlington, Oxford ; Waltham, MA : William Andrew, 2015.
Temas:
Insulated gate bipolar transistors.
Insulated gate bipolar transistors > Reliability.
Transistors bipolaires �a grille isol�ee > Fiabilit�e.
Transistors bipolaires �a grille isol�ee.
TECHNOLOGY & ENGINEERING > Mechanical.
Insulated gate bipolar transistors
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; The IGBT Device; Copyright; Dedication; Contents; About the Author; Foreword; Preface; Chapter 1
  • Introduction; 1.1 IGBT APPLICATIONS SPECTRUM; 1.2 BASIC IGBT DEVICE STRUCTURES; 1.3 IGBT DEVELOPMENT AND COMMERCIALIZATION HISTORY; 1.4 SCALING OF POWER RATINGS; 1.5 SUMMARY; REFERENCES; Chapter 2
  • IGBT Structure and Operation; 2.1 SYMMETRIC D-MOS STRUCTURE; 2.2 ASYMMETRIC D-MOS STRUCTURE; 2.3 TRENCH-GATE IGBT STRUCTURE; 2.4 TRANSPARENT EMITTER IGBT STRUCTURE; 2.5 NOVEL IGBT STRUCTURES; 2.6 LATERAL IGBT STRUCTURES; 2.7 COMPLEMENTARY IGBT STRUCTURES; 2.8 SUMMARY; REFERENCES.
  • Chapter 3
  • IGBT Structural Design3.1 THRESHOLD VOLTAGE; 3.2 SYMMETRIC IGBT STRUCTURE; 3.3 ASYMMETRIC IGBT STRUCTURE; 3.4 TRANSPARENT EMITTER IGBT STRUCTURE; 3.5 SILICON CARBIDE IGBT STRUCTURES; 3.6 OPTIMUM SIC ASYMMETRIC IGBT STRUCTURE; 3.7 SUMMARY; REFERENCES; Chapter 4
  • Safe Operating Area Design; 4.1 PARASITIC THYRISTOR; 4.2 SUPPRESSING THE PARASITIC THYRISTOR; 4.3 SAFE OPERATING AREA; 4.4 NOVEL SILICON DEVICE STRUCTURES; 4.5 SILICON CARBIDE DEVICES; 4.6 SUMMARY; REFERENCES; Chapter 5
  • Chip Design, Protection, and Fabrication; 5.1 ACTIVE AREA; 5.2 GATE PAD DESIGN.
  • 5.3 EDGE TERMINATION DESIGN5.4 INTEGRATED SENSORS; 5.5 PLANAR-GATE DEVICE FABRICATION PROCESS; 5.6 TRENCH-GATE DEVICE FABRICATION PROCESS; 5.7 LIFETIME CONTROL; 5.8 SUMMARY; REFERENCES; Chapter 6
  • Package and Module Design; 6.1 DISCRETE DEVICE PACKAGE; 6.2 IMPROVED DISCRETE DEVICE PACKAGE; 6.3 BASIC POWER MODULE; 6.4 FLAT-PACK POWER MODULE; 6.5 METAL BASEPLATE FREE POWER MODULE; 6.6 SMART POWER MODULES; 6.7 RELIABILITY; 6.8 SUMMARY; REFERENCES; Chapter 7
  • Gate Drive Circuit Design; 7.1 BASIC GATE DRIVE; 7.2 ASYMMETRIC GATE DRIVE; 7.3 TWO-STAGE GATE DRIVE; 7.4 ACTIVE GATE VOLTAGE CONTROL.
  • 7.5 VARIABLE GATE RESISTANCE DRIVE7.6 DIGITAL GATE DRIVE; 7.7 SUMMARY; REFERENCES; Chapter 8
  • IGBT Models; 8.1 PHYSICS-BASED CIRCUIT MODEL; 8.2 IGBT ANALOG BEHAVIORAL MODEL; 8.3 MODEL PARAMETER EXTRACTION; 8.4 SUMMARY; REFERENCES; Chapter 9
  • IGBT Applications: Transportation; 9.1 GASOLINE-POWERED VEHICLES; 9.2 ELECTRIC AND HYBRID-ELECTRIC VEHICLES; 9.3 EV CHARGING STATIONS; 9.4 ELECTRIC TRANSIT BUS; 9.5 ELECTRIC TRAMS AND TROLLEYS; 9.6 SUBWAY AND AIRPORT TRAINS; 9.7 ELECTRIC LOCOMOTIVES; 9.8 DIESEL-ELECTRIC LOCOMOTIVES; 9.9 HIGH-SPEED ELECTRIC TRAINS; 9.10 MARINE PROPULSION.
  • 9.11 ALL-ELECTRIC AIRCRAFT9.12 SUMMARY; REFERENCES; Chapter 10
  • IGBT Applications: Industrial; 10.1 INDUSTRIAL MOTOR DRIVES; 10.2 ADJUSTABLE SPEED DRIVES FOR MOTOR CONTROL; 10.3 PULSE WIDTH MODULATED ASD; 10.4 FACTORY AUTOMATION; 10.5 ROBOTICS; 10.6 WELDING; 10.7 INDUCTION HEATING; 10.8 MILLING AND DRILLING MACHINES; 10.9 METAL AND PAPER MILLS; 10.10 ELECTROSTATIC PRECIPITATORS; 10.11 TEXTILE MILLS; 10.12 MINING AND EXCAVATION; 10.13 IGBT OPTIMIZATION FOR INDUSTRIAL APPLICATIONS; 10.14 SUMMARY; REFERENCES; Chapter 11
  • IGBT Applications: Lighting; 11.1 TRIAD INCANDESCENT LAMP.

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