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The IGBT Device : Physics, Design and Applications of the Insulated Gate Bipolar Transistor /
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent li...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Kidlington, Oxford ; Waltham, MA :
William Andrew,
2015.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Baliga, B. Jayant, |d 1948- |e author. | |
| 245 | 1 | 4 | |a The IGBT Device : |b Physics, Design and Applications of the Insulated Gate Bipolar Transistor / |c B. Jayant Baliga. |
| 264 | 1 | |a Kidlington, Oxford ; |a Waltham, MA : |b William Andrew, |c 2015. | |
| 264 | 4 | |c �2015 | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Vendor-supplied metadata. | |
| 520 | |a The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. | ||
| 505 | 0 | |a Front Cover; The IGBT Device; Copyright; Dedication; Contents; About the Author; Foreword; Preface; Chapter 1 -- Introduction; 1.1 IGBT APPLICATIONS SPECTRUM; 1.2 BASIC IGBT DEVICE STRUCTURES; 1.3 IGBT DEVELOPMENT AND COMMERCIALIZATION HISTORY; 1.4 SCALING OF POWER RATINGS; 1.5 SUMMARY; REFERENCES; Chapter 2 -- IGBT Structure and Operation; 2.1 SYMMETRIC D-MOS STRUCTURE; 2.2 ASYMMETRIC D-MOS STRUCTURE; 2.3 TRENCH-GATE IGBT STRUCTURE; 2.4 TRANSPARENT EMITTER IGBT STRUCTURE; 2.5 NOVEL IGBT STRUCTURES; 2.6 LATERAL IGBT STRUCTURES; 2.7 COMPLEMENTARY IGBT STRUCTURES; 2.8 SUMMARY; REFERENCES. | |
| 505 | 8 | |a Chapter 3 -- IGBT Structural Design3.1 THRESHOLD VOLTAGE; 3.2 SYMMETRIC IGBT STRUCTURE; 3.3 ASYMMETRIC IGBT STRUCTURE; 3.4 TRANSPARENT EMITTER IGBT STRUCTURE; 3.5 SILICON CARBIDE IGBT STRUCTURES; 3.6 OPTIMUM SIC ASYMMETRIC IGBT STRUCTURE; 3.7 SUMMARY; REFERENCES; Chapter 4 -- Safe Operating Area Design; 4.1 PARASITIC THYRISTOR; 4.2 SUPPRESSING THE PARASITIC THYRISTOR; 4.3 SAFE OPERATING AREA; 4.4 NOVEL SILICON DEVICE STRUCTURES; 4.5 SILICON CARBIDE DEVICES; 4.6 SUMMARY; REFERENCES; Chapter 5 -- Chip Design, Protection, and Fabrication; 5.1 ACTIVE AREA; 5.2 GATE PAD DESIGN. | |
| 505 | 8 | |a 5.3 EDGE TERMINATION DESIGN5.4 INTEGRATED SENSORS; 5.5 PLANAR-GATE DEVICE FABRICATION PROCESS; 5.6 TRENCH-GATE DEVICE FABRICATION PROCESS; 5.7 LIFETIME CONTROL; 5.8 SUMMARY; REFERENCES; Chapter 6 -- Package and Module Design; 6.1 DISCRETE DEVICE PACKAGE; 6.2 IMPROVED DISCRETE DEVICE PACKAGE; 6.3 BASIC POWER MODULE; 6.4 FLAT-PACK POWER MODULE; 6.5 METAL BASEPLATE FREE POWER MODULE; 6.6 SMART POWER MODULES; 6.7 RELIABILITY; 6.8 SUMMARY; REFERENCES; Chapter 7 -- Gate Drive Circuit Design; 7.1 BASIC GATE DRIVE; 7.2 ASYMMETRIC GATE DRIVE; 7.3 TWO-STAGE GATE DRIVE; 7.4 ACTIVE GATE VOLTAGE CONTROL. | |
| 505 | 8 | |a 7.5 VARIABLE GATE RESISTANCE DRIVE7.6 DIGITAL GATE DRIVE; 7.7 SUMMARY; REFERENCES; Chapter 8 -- IGBT Models; 8.1 PHYSICS-BASED CIRCUIT MODEL; 8.2 IGBT ANALOG BEHAVIORAL MODEL; 8.3 MODEL PARAMETER EXTRACTION; 8.4 SUMMARY; REFERENCES; Chapter 9 -- IGBT Applications: Transportation; 9.1 GASOLINE-POWERED VEHICLES; 9.2 ELECTRIC AND HYBRID-ELECTRIC VEHICLES; 9.3 EV CHARGING STATIONS; 9.4 ELECTRIC TRANSIT BUS; 9.5 ELECTRIC TRAMS AND TROLLEYS; 9.6 SUBWAY AND AIRPORT TRAINS; 9.7 ELECTRIC LOCOMOTIVES; 9.8 DIESEL-ELECTRIC LOCOMOTIVES; 9.9 HIGH-SPEED ELECTRIC TRAINS; 9.10 MARINE PROPULSION. | |
| 505 | 8 | |a 9.11 ALL-ELECTRIC AIRCRAFT9.12 SUMMARY; REFERENCES; Chapter 10 -- IGBT Applications: Industrial; 10.1 INDUSTRIAL MOTOR DRIVES; 10.2 ADJUSTABLE SPEED DRIVES FOR MOTOR CONTROL; 10.3 PULSE WIDTH MODULATED ASD; 10.4 FACTORY AUTOMATION; 10.5 ROBOTICS; 10.6 WELDING; 10.7 INDUCTION HEATING; 10.8 MILLING AND DRILLING MACHINES; 10.9 METAL AND PAPER MILLS; 10.10 ELECTROSTATIC PRECIPITATORS; 10.11 TEXTILE MILLS; 10.12 MINING AND EXCAVATION; 10.13 IGBT OPTIMIZATION FOR INDUSTRIAL APPLICATIONS; 10.14 SUMMARY; REFERENCES; Chapter 11 -- IGBT Applications: Lighting; 11.1 TRIAD INCANDESCENT LAMP. | |
| 546 | |a English. | ||
| 650 | 0 | |a Insulated gate bipolar transistors. | |
| 650 | 0 | |a Insulated gate bipolar transistors |x Reliability. | |
| 650 | 6 | |a Transistors bipolaires �a grille isol�ee |0 (CaQQLa)000270021 |x Fiabilit�e. |0 (CaQQLa)201-0379337 | |
| 650 | 6 | |a Transistors bipolaires �a grille isol�ee. |0 (CaQQLa)000270021 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Insulated gate bipolar transistors |2 fast |0 (OCoLC)fst00974443 | |
| 776 | 0 | 8 | |i Print version: |a Baliga, B. Jayant. |t IGBT Device : Physics, Design and Applications of the Insulated Gate Bipolar Transistor. |d Burlington : Elsevier Science, �2015 |z 9781455731435 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9781455731435 |z Texto completo |