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Imperfections and active centres in semiconductors.
Imperfections and Active Centres in Semiconductors.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford, New York,
Pergamon Press,
1964.
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| Colección: | International series of monographs on semiconductors ;
v. 6. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Imperfections and Active Centres in Semiconductors; Copyright Page; Table of Contents; PREFACE; Chapter 1. FUNDAMENTAL CONCEPTS OF THE SEMICONDUCTOR CRYSTAL; 1.1 INTRODUCTION; 1.2 SEMIGONDUGTION AND THE ATOMIC LATTICE OF GERMANIUM AND SILICON; 1.3 POINT DEFECTS IN THE CRYSTAL; Chapter 2. DISLOCATIONS OR LINE DEFECTS; 2.1 A SURVEY OF DISLOCATION TYPES; 2.2 THE MOTION AND GENERATION OF DISLOCATIONS; 2.3 THE GEOMETRY OF THE DISLOCATIONS IN THE DIAMOND LATTICE; Chapter 3. THE DETECTION OF DISLOCATIONS BY X-RAY AND OTHER TECHNIQUES; 3.1 X-RAY DIFFRACTION AND CRYSTAL IMPERFECTIONS
- 3.2 THE DETECTION OF DEFECTS BY MICROSCOPY AND OTHER METHODSChapter 4. PLASTIC DEFORMATION AND TWINNING; 4.1 DEFORMATION EXPERIMENTS AND BEHAVIOUR OF THE DISLOCATIONS; 4.2 TWINNING IN GERMANIUM AND SILICON; Chapter 5. THE GROWTH OF SINGLE CRYSTALS; 5.1 CRYSTAL GROWING TECHNIQUES AND CRYSTAL QUALITY; 5.2 THE TEMPERATURE DISTRIBUTION AS A CRYSTAL GROWTH PARAMETER; 5.3 THERMAL STRESS IN THE GROWTH OF CRYSTALS; 5.4 THEORIES OF CRYSTAL GROWTH APPLIED TO SEMICONDUCTORS; Chapter 6. THE DISTRIBUTION AND CONTROL OF IMPURITIES; 6.1 SIMPLE FREEZING AND THE SOLUTE DISTRIBUTION
- 6.2 LIQUID ZONE TECHNIQUES FOR THE DISTRIBUTION OF IMPURITIESChapter 7. THE CHEMICAL AND PHYSICAL BEHAVIOUR OF THE IMPURITY ELEMENTS; 7.1 METHODS FOR THE DETERMINATION OF IMPURITIES IN SEMICONDUCTORS; 7.2 THE SOLUBILITY OF THE ACTIVE IMPURITIES IN GERMANIUM AND SILICON; 7.3 DIFFUSION OF CHEMICAL IMPURITIES; 7.4 THE PRECIPITATION OF IMPURITY ELEMENTS; 7.5 THERMAL ACCEPTORS AND THE ELECTRICAL BEHAVIOUR OF SEMICONDUCTORS; Chapter 8. DEFECTS AND THE SEMICONDUCTING PROPERTIES OF GERMANIUM AND SILICON; 8.1 THE INFLUENCE OF DISLOCATIONS ON THE ELECTRICAL PROPERTIES
- 8.2 IRRADIATION DAMAGE AND SEMICONDUCTOR BEHAVIOUR8.3 THE ANNEALING BEHAVIOUR OF IRRADIATED GERMANIUM AND SILICON; Chapter 9. ETCHING AND THE FORMATION OF ETCH PITS; 9.1 THE CHEMISTRY OF ETCHING; 9.2 PHYSICAL CHARACTERISTICS OF THE ETCH PITS; 9.3 THE CORRESPONDENCE BETWEEN ETCH PITS AND DISLOCATIONS; 9.4 THEORETICAL CONSIDERATIONS OF THE ETCHING MECHANISM; 9.5 ORIGIN OF THE SPIRAL ETCH PITS; APPENDIX; REFERENCES; INDEX