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Imperfections and active centres in semiconductors.
Imperfections and Active Centres in Semiconductors.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford, New York,
Pergamon Press,
1964.
|
| Colección: | International series of monographs on semiconductors ;
v. 6. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Rhodes, R. G. | |
| 245 | 1 | 0 | |a Imperfections and active centres in semiconductors. |
| 260 | |a Oxford, |a New York, |b Pergamon Press, |c 1964. | ||
| 300 | |a 1 online resource (xii, 373 pages) |b illustrations, diagrams | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a International series of monographs on semiconductors, |v v. 6 | |
| 504 | |a Includes bibliographical references (pages 355-368). | ||
| 588 | 0 | |a Print version record. | |
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2015. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2015 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; Imperfections and Active Centres in Semiconductors; Copyright Page; Table of Contents; PREFACE; Chapter 1. FUNDAMENTAL CONCEPTS OF THE SEMICONDUCTOR CRYSTAL; 1.1 INTRODUCTION; 1.2 SEMIGONDUGTION AND THE ATOMIC LATTICE OF GERMANIUM AND SILICON; 1.3 POINT DEFECTS IN THE CRYSTAL; Chapter 2. DISLOCATIONS OR LINE DEFECTS; 2.1 A SURVEY OF DISLOCATION TYPES; 2.2 THE MOTION AND GENERATION OF DISLOCATIONS; 2.3 THE GEOMETRY OF THE DISLOCATIONS IN THE DIAMOND LATTICE; Chapter 3. THE DETECTION OF DISLOCATIONS BY X-RAY AND OTHER TECHNIQUES; 3.1 X-RAY DIFFRACTION AND CRYSTAL IMPERFECTIONS | |
| 505 | 8 | |a 3.2 THE DETECTION OF DEFECTS BY MICROSCOPY AND OTHER METHODSChapter 4. PLASTIC DEFORMATION AND TWINNING; 4.1 DEFORMATION EXPERIMENTS AND BEHAVIOUR OF THE DISLOCATIONS; 4.2 TWINNING IN GERMANIUM AND SILICON; Chapter 5. THE GROWTH OF SINGLE CRYSTALS; 5.1 CRYSTAL GROWING TECHNIQUES AND CRYSTAL QUALITY; 5.2 THE TEMPERATURE DISTRIBUTION AS A CRYSTAL GROWTH PARAMETER; 5.3 THERMAL STRESS IN THE GROWTH OF CRYSTALS; 5.4 THEORIES OF CRYSTAL GROWTH APPLIED TO SEMICONDUCTORS; Chapter 6. THE DISTRIBUTION AND CONTROL OF IMPURITIES; 6.1 SIMPLE FREEZING AND THE SOLUTE DISTRIBUTION | |
| 505 | 8 | |a 6.2 LIQUID ZONE TECHNIQUES FOR THE DISTRIBUTION OF IMPURITIESChapter 7. THE CHEMICAL AND PHYSICAL BEHAVIOUR OF THE IMPURITY ELEMENTS; 7.1 METHODS FOR THE DETERMINATION OF IMPURITIES IN SEMICONDUCTORS; 7.2 THE SOLUBILITY OF THE ACTIVE IMPURITIES IN GERMANIUM AND SILICON; 7.3 DIFFUSION OF CHEMICAL IMPURITIES; 7.4 THE PRECIPITATION OF IMPURITY ELEMENTS; 7.5 THERMAL ACCEPTORS AND THE ELECTRICAL BEHAVIOUR OF SEMICONDUCTORS; Chapter 8. DEFECTS AND THE SEMICONDUCTING PROPERTIES OF GERMANIUM AND SILICON; 8.1 THE INFLUENCE OF DISLOCATIONS ON THE ELECTRICAL PROPERTIES | |
| 505 | 8 | |a 8.2 IRRADIATION DAMAGE AND SEMICONDUCTOR BEHAVIOUR8.3 THE ANNEALING BEHAVIOUR OF IRRADIATED GERMANIUM AND SILICON; Chapter 9. ETCHING AND THE FORMATION OF ETCH PITS; 9.1 THE CHEMISTRY OF ETCHING; 9.2 PHYSICAL CHARACTERISTICS OF THE ETCH PITS; 9.3 THE CORRESPONDENCE BETWEEN ETCH PITS AND DISLOCATIONS; 9.4 THEORETICAL CONSIDERATIONS OF THE ETCHING MECHANISM; 9.5 ORIGIN OF THE SPIRAL ETCH PITS; APPENDIX; REFERENCES; INDEX | |
| 520 | |a Imperfections and Active Centres in Semiconductors. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Crystallography. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 2 | |a Crystallography |0 (DNLM)D003461 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Cristallographie. |0 (CaQQLa)201-0014886 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a Crystallography. |2 fast |0 (OCoLC)fst00884652 | |
| 650 | 7 | |a Semiconductors. |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 1 | 7 | |a Halfgeleiders. |2 gtt |
| 650 | 1 | 7 | |a Roosterfouten. |2 gtt |
| 776 | 0 | 8 | |i Print version: |a Rhodes, R.G. |t Imperfections and active centres in semiconductors. |d Oxford, New York, Pergamon Press, 1964 |w (DLC) 63018928 |w (OCoLC)2077325 |
| 830 | 0 | |a International series of monographs on semiconductors ; |v v. 6. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9781483197784 |z Texto completo |