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Properties and applications of transistors /

Properties and Applications of Transistors.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Vasseur, J. P. (Autor)
Autor Corporativo: Soci�et�e Fran�caise de Documentation �Electronique
Otros Autores: Radley, D. E. (Traductor), Garrood, J. R. (Traductor), Ponte, Maurice (Autor de introducción, etc.)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London, England : Pergamon Press, 1964.
Colección:Pergamon student editions.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Properties and Applications of Transistors; Copyright Page; Table of Contents; FOREWORD; INTRODUCTION; SYMBOLS AND NOTATION ; 1. MEANING OF SYMBOLS; 2. MEANING OF SUBSCRIPTS; 3. PARAMETERS OF A TWO-PORT OR EQUIVALENT CIRCUIT; 4. GRAPHICAL SYMBOLS; CHAPTER ONE. PHYSICAL PRINCIPLES OF THE TRANSISTOR; 1.1 CONDUCTIVITY OF SEMICONDUCTORS [1]; 1.2 n-p JUNCTIONS [2]; 1.3 JUNCTION TRANSISTOR [2]; 1.4 OTHER TYPES OF TRANSISTORS; 1.5 TRANSISTOR TECHNOLOGY; REFERENCES; CHAPTER TWO. GENERAL DISCUSSION OF LINEAR TWO-PORTS.
  • 2.1 representation of a transistor working at low signal level by a linear two- port 2.2 relations between current and voltage in a linear two-port; 2.3 passive, active and unidirectionaltwo-ports; 2.4 relations between the different sets of parameters representing a two-port; 2.5 equivalent circuits for a two-port; 2.6 relations between the two-ports corresponding to the three possible methods of connexion of a transistor; 2.7 gain of a two-port; 2.8 elements of matrix algebra; 2.9 thevenin's theorem; references; chapter three. transistor characteristics; 3.1 static characteristics.
  • 3.2 small-signal low-frequency characteristics [4]3.3 small-signal characteristicsat medium frequencies [2, 5] ; 3.4 other types of junction transistors [6]; 3.5 point-contact transistors [7]; 3.6 analogies between transistors and valves; 3.7 measurement of the elements of the equivalent circuit [9]; 3.8 the avalanche effect [10]; 3.9 punch-through; references; chapter four. the transistor as a linear amplifier; 4.1 stability of a transistor; 4.2 neutralization of a transistor; 4.3 the three basic modes of connexion of a transistor [5]; 4.4 common-emitter connexion; 4.5 common-base connexion.
  • 4.6 common-collector connexion4.7 transistor with a complex base resistance; 4.8 measurement of power gain; 4.9 point-contact transistors at low frequencies; 4.10 graphical methods [8]; references; chapter five. bias circuits; 5.1 general principles; 5.2 drift of the working point; 5.3 calculation of the stability factor; 5.4 stabilization of the working point; 5.5 stability factor for several d.c. coupled transistors; 5.6 tandem amplifiers; 5.7 stabilization by compensation of the saturation current; 5.8 difficulties peculiar to class b operation; 5.9 low-temperature drift; references.
  • Chapter six. maximum ratings of a transistor6.1 maximum voltage; 6.2 maximum current; 6.3 thermal runaway; 6.4 cooling by natural convection; 6.5 simplified expressions; 6.6 dynamic examination of the phenomena; 6.7 application to other devices; 6.8 measurements; references; chapter seven. transistor noise; 7.1 general discussion of noise; 7.2 normal noise in a transistor; 7.3 transistor abnormal noise at low frequencies; 7.4 noise in a wide-band amplifier; 7.5 comparison with valves; 7.6 measurements; references; list of tables; index.