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Properties and applications of transistors /
Properties and Applications of Transistors.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London, England :
Pergamon Press,
1964.
|
| Colección: | Pergamon student editions.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 020 | |z 9780080102443 | ||
| 020 | |z 9780080136479 | ||
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| 050 | 4 | |a TK7872.T73 |b .V377 1964eb | |
| 072 | 7 | |a TEC |x 009070 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.3815/28 |2 23 |
| 100 | 1 | |a Vasseur, J. P., |e author. | |
| 245 | 1 | 0 | |a Properties and applications of transistors / |c J.P. Vasseur ; translated by D.E. Radley and J.R. Garrood ; foreword by Maurice Ponte. |
| 264 | 1 | |a London, England : |b Pergamon Press, |c 1964. | |
| 264 | 4 | |c �1964 | |
| 300 | |a 1 online resource (473 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Pergamon student editions | |
| 504 | |a Includes bibliographical references at the end of each chapters and index. | ||
| 588 | 0 | |a Online resource; title from PDF title page (ebrary, viewed November 18, 2014). | |
| 505 | 0 | |a Front Cover; Properties and Applications of Transistors; Copyright Page; Table of Contents; FOREWORD; INTRODUCTION; SYMBOLS AND NOTATION ; 1. MEANING OF SYMBOLS; 2. MEANING OF SUBSCRIPTS; 3. PARAMETERS OF A TWO-PORT OR EQUIVALENT CIRCUIT; 4. GRAPHICAL SYMBOLS; CHAPTER ONE. PHYSICAL PRINCIPLES OF THE TRANSISTOR; 1.1 CONDUCTIVITY OF SEMICONDUCTORS [1]; 1.2 n-p JUNCTIONS [2]; 1.3 JUNCTION TRANSISTOR [2]; 1.4 OTHER TYPES OF TRANSISTORS; 1.5 TRANSISTOR TECHNOLOGY; REFERENCES; CHAPTER TWO. GENERAL DISCUSSION OF LINEAR TWO-PORTS. | |
| 505 | 8 | |a 2.1 representation of a transistor working at low signal level by a linear two- port 2.2 relations between current and voltage in a linear two-port; 2.3 passive, active and unidirectionaltwo-ports; 2.4 relations between the different sets of parameters representing a two-port; 2.5 equivalent circuits for a two-port; 2.6 relations between the two-ports corresponding to the three possible methods of connexion of a transistor; 2.7 gain of a two-port; 2.8 elements of matrix algebra; 2.9 thevenin's theorem; references; chapter three. transistor characteristics; 3.1 static characteristics. | |
| 505 | 8 | |a 3.2 small-signal low-frequency characteristics [4]3.3 small-signal characteristicsat medium frequencies [2, 5] ; 3.4 other types of junction transistors [6]; 3.5 point-contact transistors [7]; 3.6 analogies between transistors and valves; 3.7 measurement of the elements of the equivalent circuit [9]; 3.8 the avalanche effect [10]; 3.9 punch-through; references; chapter four. the transistor as a linear amplifier; 4.1 stability of a transistor; 4.2 neutralization of a transistor; 4.3 the three basic modes of connexion of a transistor [5]; 4.4 common-emitter connexion; 4.5 common-base connexion. | |
| 505 | 8 | |a 4.6 common-collector connexion4.7 transistor with a complex base resistance; 4.8 measurement of power gain; 4.9 point-contact transistors at low frequencies; 4.10 graphical methods [8]; references; chapter five. bias circuits; 5.1 general principles; 5.2 drift of the working point; 5.3 calculation of the stability factor; 5.4 stabilization of the working point; 5.5 stability factor for several d.c. coupled transistors; 5.6 tandem amplifiers; 5.7 stabilization by compensation of the saturation current; 5.8 difficulties peculiar to class b operation; 5.9 low-temperature drift; references. | |
| 505 | 8 | |a Chapter six. maximum ratings of a transistor6.1 maximum voltage; 6.2 maximum current; 6.3 thermal runaway; 6.4 cooling by natural convection; 6.5 simplified expressions; 6.6 dynamic examination of the phenomena; 6.7 application to other devices; 6.8 measurements; references; chapter seven. transistor noise; 7.1 general discussion of noise; 7.2 normal noise in a transistor; 7.3 transistor abnormal noise at low frequencies; 7.4 noise in a wide-band amplifier; 7.5 comparison with valves; 7.6 measurements; references; list of tables; index. | |
| 520 | |a Properties and Applications of Transistors. | ||
| 650 | 0 | |a Transistors. | |
| 650 | 6 | |a Transistors. |0 (CaQQLa)201-0034315 | |
| 650 | 7 | |a transistors. |2 aat |0 (CStmoGRI)aat300024553 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Transistors. |2 fast |0 (OCoLC)fst01154729 | |
| 700 | 1 | |a Radley, D. E., |e translator. | |
| 700 | 1 | |a Garrood, J. R., |e translator. | |
| 700 | 1 | |a Ponte, Maurice, |e author of introduction, etc. | |
| 710 | 2 | |a Soci�et�e Fran�caise de Documentation �Electronique. | |
| 776 | 0 | 8 | |i Print version: |a Vasseur, J.P. |t Properties and applications of transistors. |d London, England : Pergamon Press, �1964 |h xxvii, 434 pages |z 9780080102443 |
| 830 | 0 | |a Pergamon student editions. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080102443 |z Texto completo |