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Semiconductor statistics /
Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics f...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Pergamon Press,
1962.
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| Colección: | International series of monographs on semiconductors ;
v. 3. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductor Statistics; Copyright Page; Table of Contents; Preface; PART I: SEMICONDUCTORS IN THERMAL EQUILIBRIUM; CHAPTER 1. BASIC CONCEPTS IN THE ELECTRON THEORY OF SOLIDS; 1.1 Classical Theories of Metallic Conduction; 1.2 Quantum Statistics and the Free Electron Theory; 1.3 The Band Theory of Solids; 1.4 The Effective Mass of Charge Carriers; 1.5 Band Shapes for Some Representative Semiconductors; 1.6 Some Varieties of Impurity Center (Flaw); CHAPTER 2. THE FERMI LEVEL-ELECTRON DENSITY EQUILIBRIUM; 2.1 The Fermi-Dirac Integrals
- 2.2 Interrelation of Free Electron Density and Fermi Level2.3 Intrinsic Semiconductors; 2.4 The Product nopo and? for Intrinsic and Extrinsic Situations; 2.5 Spatial Fluctuations of Carrier Density; CHAPTER 3. SEMICONDUCTORS DOMINATED BY IMPURITY LEVELS; 3.1 Occupancy Factor for Impurity Levels; 3.2 Semiconductors Controlled by a Single Monovalent Donor Species; 3.3 Semiconductors Dominated by Several Localized Levels; 3.4 The Influence of Lattice Defects; 3.5 Impurity Bands and the Behavior of an Impurity Metal; PART II: SEMICONDUCTORS CONTAINING EXCESS CARRIERS
- CHAPTER 4. FACTORS AFFECTING CARRIER TRANSITION RATES4.1 Reciprocity of Transition Probabilities; 4.2 The Continuity Equations; 4.3 Band-to-Band and Band-to-Flaw Transitions; CHAPTER 5. RADIATIVE AND RADIATIONLESS RECOMBINATION; 5.1 The Physics of The Two Processes; 5.2 Behavior of the Radiative Lifetime; CHAPTER 6. BAND-TO-BAND AUGER RECOMBINATION; 6.1 Electron-Electron and Hole-Hole Collisions; 6.2 Behavior of the Auger Lifetime when mc <mv; CHAPTER 7. FREE CARRIER CAPTURE BY FLAWS; 7.1 Flaw Capture Mechanisms; 7.2 Behavior of the Extrinsic Lifetime; 7.3 Interaction with Both Bands
- CHAPTER 8. RECOMBINATION THROUGH A SET OF MONOVALENT FLAWS8.1 The Two Continuity Equations; 8.2 The Criteria of Trapping; 8.3 Lifetime for a Small Flaw Density (The S-R Model); 8.4 Steady State Conditions for Arbitrary Flaw Density; 8.5 Transient Decay for Arbitrary Flaw Density; CHAPTER 9. MORE COMPLICATED EXAMPLES OF FLAW RECOMBINATION; 9.1 Multivalent Flaws; 9.2 More Than One Kind of Flaw; 9.3 The Haynes-Hornbeck Trapping Model; 9.4 Recombination and Trapping at Dislocations; CHAPTER 10. SPATIAL DISTRIBUTION OF EXCESS CARRIERS; 10.1 Approach to the Space-dependent Problem
- 10.2 Situations Involving Junctions and Contacts10.3 Residual Spatial Influences in Homogeneous Samples; 10.4 Lifetime in Filaments; APPENDIXES; Appendix A: THE FERMI-DIRAC DISTRIBUTION LAW; Appendix B: TABLES OF THE FERMI-DIRAC INTEGRALS; Appendix C: SOME APPLICATIONS AND PROPERTIES OF THE FERMI-DIRAC INTEGRALS; C.1. Fermi-Dirac Integrals and Transport Properties; C.2. Fermi-Dirac Integrals for Non-standard Bands; C.3. Analytic Properties of the Fermi Integrals, and Asymptotic Expansions for Non-degenerate and Degenerate Cases; REFERENCES; INDEX