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Semiconductor statistics /
Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics f...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Pergamon Press,
1962.
|
| Colección: | International series of monographs on semiconductors ;
v. 3. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn898071222 | ||
| 003 | OCoLC | ||
| 005 | 20231120111925.0 | ||
| 006 | m o d | ||
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| 008 | 141212s1962 enka ob 000 0 eng d | ||
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| 019 | |a 894510595 |a 1162554134 | ||
| 020 | |a 9781483148946 | ||
| 020 | |a 1483148947 | ||
| 020 | |z 9780080095929 | ||
| 020 | |z 0080095925 | ||
| 035 | |a (OCoLC)898071222 |z (OCoLC)894510595 |z (OCoLC)1162554134 | ||
| 050 | 4 | |a QC612.S4 |b I58 vol. 3eb | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 072 | 7 | |a SCI |x 022000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.622 |2 22 |
| 100 | 1 | |a Blakemore, J. S. |q (John Sydney), |d 1927- |e author. | |
| 245 | 1 | 0 | |a Semiconductor statistics / |c by J.S. Blakemore. |
| 264 | 1 | |a Oxford : |b Pergamon Press, |c 1962. | |
| 300 | |a 1 online resource (381 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a International series of monographs on semiconductors ; |v volume 3 | |
| 504 | |a Includes bibliographical references. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Semiconductor Statistics; Copyright Page; Table of Contents; Preface; PART I: SEMICONDUCTORS IN THERMAL EQUILIBRIUM; CHAPTER 1. BASIC CONCEPTS IN THE ELECTRON THEORY OF SOLIDS; 1.1 Classical Theories of Metallic Conduction; 1.2 Quantum Statistics and the Free Electron Theory; 1.3 The Band Theory of Solids; 1.4 The Effective Mass of Charge Carriers; 1.5 Band Shapes for Some Representative Semiconductors; 1.6 Some Varieties of Impurity Center (Flaw); CHAPTER 2. THE FERMI LEVEL-ELECTRON DENSITY EQUILIBRIUM; 2.1 The Fermi-Dirac Integrals | |
| 505 | 8 | |a 2.2 Interrelation of Free Electron Density and Fermi Level2.3 Intrinsic Semiconductors; 2.4 The Product nopo and? for Intrinsic and Extrinsic Situations; 2.5 Spatial Fluctuations of Carrier Density; CHAPTER 3. SEMICONDUCTORS DOMINATED BY IMPURITY LEVELS; 3.1 Occupancy Factor for Impurity Levels; 3.2 Semiconductors Controlled by a Single Monovalent Donor Species; 3.3 Semiconductors Dominated by Several Localized Levels; 3.4 The Influence of Lattice Defects; 3.5 Impurity Bands and the Behavior of an Impurity Metal; PART II: SEMICONDUCTORS CONTAINING EXCESS CARRIERS | |
| 505 | 8 | |a CHAPTER 4. FACTORS AFFECTING CARRIER TRANSITION RATES4.1 Reciprocity of Transition Probabilities; 4.2 The Continuity Equations; 4.3 Band-to-Band and Band-to-Flaw Transitions; CHAPTER 5. RADIATIVE AND RADIATIONLESS RECOMBINATION; 5.1 The Physics of The Two Processes; 5.2 Behavior of the Radiative Lifetime; CHAPTER 6. BAND-TO-BAND AUGER RECOMBINATION; 6.1 Electron-Electron and Hole-Hole Collisions; 6.2 Behavior of the Auger Lifetime when mc <mv; CHAPTER 7. FREE CARRIER CAPTURE BY FLAWS; 7.1 Flaw Capture Mechanisms; 7.2 Behavior of the Extrinsic Lifetime; 7.3 Interaction with Both Bands | |
| 505 | 8 | |a CHAPTER 8. RECOMBINATION THROUGH A SET OF MONOVALENT FLAWS8.1 The Two Continuity Equations; 8.2 The Criteria of Trapping; 8.3 Lifetime for a Small Flaw Density (The S-R Model); 8.4 Steady State Conditions for Arbitrary Flaw Density; 8.5 Transient Decay for Arbitrary Flaw Density; CHAPTER 9. MORE COMPLICATED EXAMPLES OF FLAW RECOMBINATION; 9.1 Multivalent Flaws; 9.2 More Than One Kind of Flaw; 9.3 The Haynes-Hornbeck Trapping Model; 9.4 Recombination and Trapping at Dislocations; CHAPTER 10. SPATIAL DISTRIBUTION OF EXCESS CARRIERS; 10.1 Approach to the Space-dependent Problem | |
| 505 | 8 | |a 10.2 Situations Involving Junctions and Contacts10.3 Residual Spatial Influences in Homogeneous Samples; 10.4 Lifetime in Filaments; APPENDIXES; Appendix A: THE FERMI-DIRAC DISTRIBUTION LAW; Appendix B: TABLES OF THE FERMI-DIRAC INTEGRALS; Appendix C: SOME APPLICATIONS AND PROPERTIES OF THE FERMI-DIRAC INTEGRALS; C.1. Fermi-Dirac Integrals and Transport Properties; C.2. Fermi-Dirac Integrals for Non-standard Bands; C.3. Analytic Properties of the Fermi Integrals, and Asymptotic Expansions for Non-degenerate and Degenerate Cases; REFERENCES; INDEX | |
| 520 | |a Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |x Statistical methods. | |
| 650 | 0 | |a Excess carriers (Solid state physics) |x Statistical methods. | |
| 650 | 0 | |a Energy-band theory of solids |x Statistical methods. | |
| 650 | 0 | |a Fermi surfaces |x Statistical methods. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |x M�ethodes statistiques. |0 (CaQQLa)201-0373903 | |
| 650 | 6 | |a Porteurs en exc�es |0 (CaQQLa)201-0291737 |x M�ethodes statistiques. |0 (CaQQLa)201-0373903 | |
| 650 | 6 | |a Bandes d'�energie (Physique) |0 (CaQQLa)201-0021891 |x M�ethodes statistiques. |0 (CaQQLa)201-0373903 | |
| 650 | 6 | |a Surfaces de Fermi |0 (CaQQLa)201-0026313 |x M�ethodes statistiques. |0 (CaQQLa)201-0373903 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Energy-band theory of solids |x Statistical methods |2 fast |0 (OCoLC)fst00910271 | |
| 650 | 7 | |a Excess carriers (Solid state physics) |x Statistical methods |2 fast |0 (OCoLC)fst00917643 | |
| 650 | 7 | |a Fermi surfaces |x Statistical methods |2 fast |0 (OCoLC)fst00923001 | |
| 650 | 7 | |a Semiconductors |x Statistical methods |2 fast |0 (OCoLC)fst01112257 | |
| 650 | 7 | |a Halbleiter |2 gnd |0 (DE-588)4022993-2 | |
| 650 | 7 | |a Statistische Physik |2 gnd |0 (DE-588)4057000-9 | |
| 650 | 1 | 7 | |a Halfgeleiders. |2 gtt |
| 650 | 1 | 7 | |a Elektronenstructuur. |2 gtt |
| 776 | 0 | 8 | |i Print version: |a Blakemore, J.S. (John Sydney), 1927- |t Semiconductor statistics |z 9781483148946 |w (DLC) 61012443 |w (OCoLC)857694 |
| 830 | 0 | |a International series of monographs on semiconductors ; |v v. 3. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080095929 |z Texto completo |