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Materials and process characterization /
Materials and Process Characterization.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Academic Press,
1983.
|
| Colección: | VLSI electronics ;
volume 6. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Materials and Process Characterization; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Characterization of Silicon Materials for VLSI; I. INTRODUCTION; II. CHARACTERIZATION TECHNIQUES; III. POLYCRYSTALLINE SILICON; IV. SINGLE-CRYSTAL SILICON; V. SLICE PREPARATION; VI. SUMMARY; APPENDIX. PROPERTIES OF 54 ELEMENTS IN SINGLE-CRYSTAL SILICON; REFERENCES; Chapter 2. Characterization of Silicon Expitaxial Films; I. INTRODUCTION; II. EPITAXIAL-GROWTH PROCESS; III. ELECTRICAL CHARACTERIZATION; IV. PHYSICAL AND OPTICAL CHARACTERIZATION.
- v. EPITAXIAL-DEFECT CHARACTERIZATIONVI. EPITAXIAL-DEFECT MEASUREMENTS; VII. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 3. Characterization of Dielectric Films; I. INTRODUCTION AND BACKGROUND; II. BASIC STRUCTURE AND PROPERTIES OF GATE DIELECTRICS; III. THE CLASSIFICATION OF DIELECTRIC CHARGES; IV. THE SPATIAL LOCATION OF OXIDE CHARGE; V. THE AMOUNT AND ENERGY LOCATION OF INTERFACE TRAPS; VI. TEMPERATURE EFFECTS ON MOBILE IONIC CHARGE; VII. INJECTED CHARGE TRAPPING IN OXIDE FILMS; VIII. THE ROLE OF DIELECTRIC LAYER CHARACTERIZATION IN VLSI; ACKNOWLEDGMENT; REFERENCES.
- Chapter 4. The Status of Dry-Developed Resists for Each Lithographic TechnologyI. INTRODUCTION; II. THE TOTAL DRY PROCESS; III. ABLATIVE RESISTS; IV. PHOTORESIST ANALOGS; V. X-RAY RESIST ANALOGS; VI. ELECTRON RESIST ANALOGS; VII. ION-BEAM RESIST ANALOGS; VIII. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 5. Microlithography in Semiconductor Device Processing; I. INTRODUCTION; II. PATTERN GENERATION; III. PHOTOMASK FABRICATION; IV. WAFER RESIST PATTERNING; V. SUMMARY AND CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. Formation and Characterization of Transition-Metal Silicides.
- I. INTRODUCTIONII. FORMATION AND CHARACTERIZATION; III. SILICIDE TRANSFORMATIONS; IV. PROPERTIES OF SILICIDES; APPENDIX. SILICIDE TABLES; ACKNOWLEDGMENTS; REFERENCES; Chapter 7. Materials Characterization for Ion Implantation; I. INTRODUCTION; II. TECHNIQUES; III. APPLICATIONS; IV. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 8. Surface Characterization For VLSI; I. INTRODUCTION; II. TECHNIQUES OF SURFACE ANALYSIS; III. APPLICATIONS TO PROCESS FLOW; IV. FUTURE TRENDS AND NEEDS; REFERENCES; Chapter 9. Microelectronic Test Chips for VLSI Electronics; I. HISTORICAL PERSPECTIVE; II. INTRODUCTION.
- III. TYPES OF TEST STRUCTURESIV. TEST-CHIP ORGANIZATION AND TEST-STRUCTURE DESIGN; V. TEST-CHIP TESTERS AND ADVANCED TEST STRUCTURES; VI. FUTURE DIRECTIONS; APPENDIX; ACKNOWLEDGMENTS; REFERENCES; Index; Contents of Other Volumes.