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Materials and process characterization /
Materials and Process Characterization.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Academic Press,
1983.
|
| Colección: | VLSI electronics ;
volume 6. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn897473385 | ||
| 003 | OCoLC | ||
| 005 | 20231120111921.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 141204s1983 nyua ob 001 0 eng d | ||
| 040 | |a OPELS |b eng |e rda |e pn |c OPELS |d N$T |d YDXCP |d EBLCP |d NLGGC |d DEBSZ |d UAB |d MERUC |d OCLCQ |d STF |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 897652043 | ||
| 020 | |a 9781483217734 |q (electronic bk.) | ||
| 020 | |a 1483217736 |q (electronic bk.) | ||
| 020 | |z 9780122341069 | ||
| 035 | |a (OCoLC)897473385 |z (OCoLC)897652043 | ||
| 050 | 4 | |a TK7874 | |
| 072 | 7 | |a TEC |x 009070 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.39/5 |2 23 |
| 245 | 0 | 0 | |a Materials and process characterization / |c edited by Norman G. Einspruch, Graydon B. Larrabee. |
| 264 | 1 | |a New York : |b Academic Press, |c 1983. | |
| 300 | |a 1 online resource (xii, 601 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a VLSI electronics ; |v volume 6 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Materials and Process Characterization; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Characterization of Silicon Materials for VLSI; I. INTRODUCTION; II. CHARACTERIZATION TECHNIQUES; III. POLYCRYSTALLINE SILICON; IV. SINGLE-CRYSTAL SILICON; V. SLICE PREPARATION; VI. SUMMARY; APPENDIX. PROPERTIES OF 54 ELEMENTS IN SINGLE-CRYSTAL SILICON; REFERENCES; Chapter 2. Characterization of Silicon Expitaxial Films; I. INTRODUCTION; II. EPITAXIAL-GROWTH PROCESS; III. ELECTRICAL CHARACTERIZATION; IV. PHYSICAL AND OPTICAL CHARACTERIZATION. | |
| 505 | 8 | |a v. EPITAXIAL-DEFECT CHARACTERIZATIONVI. EPITAXIAL-DEFECT MEASUREMENTS; VII. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 3. Characterization of Dielectric Films; I. INTRODUCTION AND BACKGROUND; II. BASIC STRUCTURE AND PROPERTIES OF GATE DIELECTRICS; III. THE CLASSIFICATION OF DIELECTRIC CHARGES; IV. THE SPATIAL LOCATION OF OXIDE CHARGE; V. THE AMOUNT AND ENERGY LOCATION OF INTERFACE TRAPS; VI. TEMPERATURE EFFECTS ON MOBILE IONIC CHARGE; VII. INJECTED CHARGE TRAPPING IN OXIDE FILMS; VIII. THE ROLE OF DIELECTRIC LAYER CHARACTERIZATION IN VLSI; ACKNOWLEDGMENT; REFERENCES. | |
| 505 | 8 | |a Chapter 4. The Status of Dry-Developed Resists for Each Lithographic TechnologyI. INTRODUCTION; II. THE TOTAL DRY PROCESS; III. ABLATIVE RESISTS; IV. PHOTORESIST ANALOGS; V. X-RAY RESIST ANALOGS; VI. ELECTRON RESIST ANALOGS; VII. ION-BEAM RESIST ANALOGS; VIII. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 5. Microlithography in Semiconductor Device Processing; I. INTRODUCTION; II. PATTERN GENERATION; III. PHOTOMASK FABRICATION; IV. WAFER RESIST PATTERNING; V. SUMMARY AND CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. Formation and Characterization of Transition-Metal Silicides. | |
| 505 | 8 | |a I. INTRODUCTIONII. FORMATION AND CHARACTERIZATION; III. SILICIDE TRANSFORMATIONS; IV. PROPERTIES OF SILICIDES; APPENDIX. SILICIDE TABLES; ACKNOWLEDGMENTS; REFERENCES; Chapter 7. Materials Characterization for Ion Implantation; I. INTRODUCTION; II. TECHNIQUES; III. APPLICATIONS; IV. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 8. Surface Characterization For VLSI; I. INTRODUCTION; II. TECHNIQUES OF SURFACE ANALYSIS; III. APPLICATIONS TO PROCESS FLOW; IV. FUTURE TRENDS AND NEEDS; REFERENCES; Chapter 9. Microelectronic Test Chips for VLSI Electronics; I. HISTORICAL PERSPECTIVE; II. INTRODUCTION. | |
| 505 | 8 | |a III. TYPES OF TEST STRUCTURESIV. TEST-CHIP ORGANIZATION AND TEST-STRUCTURE DESIGN; V. TEST-CHIP TESTERS AND ADVANCED TEST STRUCTURES; VI. FUTURE DIRECTIONS; APPENDIX; ACKNOWLEDGMENTS; REFERENCES; Index; Contents of Other Volumes. | |
| 520 | |a Materials and Process Characterization. | ||
| 650 | 0 | |a Integrated circuits |x Very large scale integration. | |
| 650 | 0 | |a Microelectronics |x Materials. | |
| 650 | 0 | |a Production engineering. | |
| 650 | 6 | |a Circuits int�egr�es �a tr�es grande �echelle. |0 (CaQQLa)201-0117255 | |
| 650 | 6 | |a Micro�electronique |0 (CaQQLa)201-0035977 |x Mat�eriaux. |0 (CaQQLa)201-0379329 | |
| 650 | 6 | |a Technique de la production. |0 (CaQQLa)201-0030177 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Integrated circuits |x Very large scale integration |2 fast |0 (OCoLC)fst00975602 | |
| 650 | 7 | |a Microelectronics |x Materials |2 fast |0 (OCoLC)fst01019771 | |
| 650 | 7 | |a Production engineering |2 fast |0 (OCoLC)fst01078282 | |
| 700 | 1 | |a Einspruch, Norman G., |e editor. | |
| 700 | 1 | |a Larrabee, Graydon B., |d 1932- |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Materials and process characterization |z 0122341066 |w (OCoLC)10947665 |
| 830 | 0 | |a VLSI electronics ; |v volume 6. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780122341069 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/07367031/6 |z Texto completo |