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Basic principles of electronics. Volume 2, Semiconductors /
Basic Principles of Electronics.
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Pergamon Press,
1971.
|
| Colección: | Commonwealth and international library. Physics division.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductors; Copyright Page; Dedication; Table of Contents; PREFACE; CHAPTER 1. CONDUCTION IN THE SOLID STATE; 1.1. HISTORICAL; 1.2. ""VACANCIES"" IN CRYSTALS; 1.3. DRUDE'S THEORY OF METALLIC CONDUCTION; 1.4. THE PARADOX; 1.5. MEAN FREE TIME; QUESTIONS; CHAPTER 2. CONDUCTION AND HEAT; 2.1. SOME KINETIC THEORY; 2.2. THE MEAN FREE PATH; 2.3. THE JOULE HEATING EFFECT; 2.4. THE FAILURE OF DRUDE'S THEORY; 2.5. THE WORK OF WIEN; 2.6. THE MODERN PICTURE OF RESISTIVITY; 2.7. THE EFFECT OF TEMPERATURE ON THE CONDUCTIVITY; QUESTIONS; CHAPTER 3. SEMICONDUCTORS; 3.1. HISTORICAL
- 3.2. CLASSIFICATION OF MATERIALS3.3. ELECTRONS AND HOLES; 3.4. EXTRINSIC OR IMPURITY SEMICONDUCTORS; QUESTIONS; CHAPTER 4. SEMICONDUCTOR TECHNOLOGY AND SIMPLE DEVICES; 4.1. TERMINOLOGY; 4.2. CRYSTAL PREPARATION; 4.3. THE MATERIALS IN USE; 4.4. PHOTOCONDUCTORS; 4.5. THE HALL EFFECT: MAGNETOMETERS; 4.6. THERMOELECTRIC SEMICONDUCTORS; 4.7. THERMISTORS; 4.8. STRAIN GAUGES; QUESTIONS; CHAPTER 5. THE p-n JUNCTION; 5.1. SEMICONDUCTOR JUNCTIONS; 5.2. DIFFUSION IN A SEMICONDUCTOR; 5.3. THE POTENTIAL BARRIER; 5.4. THE p-n JUNCTION WITH FORWARD AND REVERSE BIAS; 5.5. THE RESISTANCE OF A p-n JUNCTION
- 9.2. AMPLIFICATION IN COMMON BASE CONNECTION9.3. A LOW-FREQUENCY EQUIVALENT CIRCUIT FOR COMMON EMITTER; 9.4. THE COMMON EMITTER AMPLIFIER; 9.5. DETERMINATION OF PARAMETERS FROM TRANSISTOR CHARACTERISTICS; 9.6. THE LOAD LINE; 9.7. BIAS CIRCUITS; 9.8. DESIGN OF A BIAS CIRCUIT; 9.9. ALTERNATIVE TRANSISTOR CONFIGURATIONS; QUESTIONS; CHAPTER 10. COMMON TRANSISTOR CIRCUITRY; 10.1. MULTI-STAGE AMPLIFIERS; 10.2. POWER OUTPUT STAGES; 10.3. TUNED AMPLIFIERS; 10.4. OSCILLATORS; 10.5. THE TRANSISTOR SWITCH; 10.6. D.C. AMPLIFIERS; 10.7. INVERTERS; QUESTIONS; CHAPTER 11. SPECIAL DEVICES, PROCESSES AND USES
- 11.1. HETEROJUNCTIONS11.2. SONAR AMPLIFIER; 11.3. RADIATION DETECTION; 11.4. POWER CONTROL; 11.5. MICROWAVE DEVICES; 11.6. OPTO-ELECTRONICS; 11.7. THE UNIJUNCTION; 11.8. FIELD EFFECT TRANSISTORS; 11.9. MICROELECTRONICS; QUESTIONS; APPENDIX I: THE h-PARAMETERS; APPENDIX II: RELATIONSHIP BETWEEN h AND T PARAMETERS FOR COMMON EMITTER CONFIGURATION; APPENDIX III: INPUT AND OUTPUT RESISTANCES AND GAINS FOR GROUNDED EMITTER TRANSISTOR, IN TERMS OF h-PARAMETERS; APPENDIX IV: CLASSIFICATION OF SEMICONDUCTOR TYPES; APPENDIX V: PRACTICAL PRECAUTIONS WITH TRANSISTORS