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Growth of crystalline semiconductor materials on crystal surfaces /
Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physi...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam, The Netherlands :
Elsevier,
1984.
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| Colección: | Thin films science and technology ;
5. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Growth of Crystalline Semiconductor Materials on Crystal Surfaces; Copyright Page; Preface; List of Symbols; Table of Contents; Chapter 1. Production of semiconductor films; 1.1. Growth and structure of epitaxial semiconductor films; 1.2. Production of films from molecular and ion beams; 1.3. Growth of A2Bg films using a gas phase of controlled composition; 1.4. Semiconductor films for microelectronics; Chapter 2. Monocrystalline substrates: Surface and near-surface regions; 2.1. Impurity heterogeneities in the surface layer of silicon with an atomically clean outer surface
- 2.2. Distribution of background and doping impurities in the surface region of a substrate and in a surface film2.3. Metals on the surfaces of silicon monocrystals; Chapter 3. General characteristics of the formation and growth of epitaxial films; 3.1. Thermodynamic and kinetic treatment of the epitaxial growth of semiconductor films; 3.2. Statistical theory of the initial stage of crystallization; 3.3. Kinetics of the initial stage of layer-by-layer epitaxial film growth and the formation of a transition region
- 3.4. Influence of orientation of the substrate surface on the effective growth rate of an epitaxial film and formation of a transition layer3.5. Computer simulation of the growth of epitaxial semiconductor films; 3.6. Interaction of screw dislocations with interfaces in the structure substrate-film-transition region; 3.7. Mechanism of film growth when using liquid-phase epitaxy; Chapter 4. Formation of the film-substrate interface and transition region; 4.1. Epitaxial film-substrate interfaces; 4.2. Capture and distribution of impurities at film growth
- 4.3. Ways of reducing the TR width in films and devicesChapter 5. Crystallization and recrystallization of amorphous films; 5.1. Crystallization kinetics of dielectric films; 5.2. Accelerated explosive or shock crystallization of amorphous films; 5.3. Thermodynamic conditions mechanism and kinetic parameters of accelerated crystallization; Chapter 6. Development of the method for stimulating semiconductor film growth and the annealing characteristics of multilayer optical structures; 6.1. Computer simulation of epitaxial growth of GaAs films
- 6.2. Study of the influence of substrate surface defects on the growth kinetics and evaporation of semiconductor films by the Monte Carlo method6.3. Attainment of monocrystalline silicon layers on nonorienting substrates; 6.4. Multilayer film structures for use with light sources; References; Author Index; Subject Index