Control of semiconductor interfaces : proceedings of the First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, 8-12 November 1993 /

This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characteriz...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Symposium on Control of Semiconductor Interfaces Karuizawa, Japan
Otros Autores: Ohdomari, I. (Iwao) (Editor ), Oshima, M. (Editor ), Hiraki, A. (Akio) (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam ; New York : Elsevier, �1994.
Temas:
Semiconductors > Junctions > Congresses.
Semiconductors > Junctions.
Semi-conducteurs > Jonctions > Congr�es.
SCIENCE > Physics > Electricity.
SCIENCE > Physics > Electromagnetism.
Halbleitergrenzfl�ache
Kongress
Congress
Conference papers and proceedings.
Actes de congr�es.
Karuizawa (1993)
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Control of Semiconductor Interfaces; Copyright Page; Preface; Table of Contents; Part 2: letal/Silicon; Part 3: Semiconductor Hetero-interface; Part 4: Characterization (I); Part 5: Semiconducting New Materials; Part 6 Beta I/Compound Semiconductor; Part 7: SiO2/Si; Part 8: Characterization (II); Part 9: Insulator/Semiconductor; Part 10: Characterization (III); Part 11: Interface in Device; Part 12: Control of Interface Formation: Si; Part 13: Control of Interface Properties: Si; Part 14: Contact Metallization: Si; Part 15: Characterization: Si.
  • Chapter 3. The Role of Hydrogen in Metal/Si Interface Formation1. Introduction; 2. Experimental; 3� Results and Discussion; ACKNOWLEDGMENTS; REFERENCES; Chapter 4. Correlation between barrier height and interface structureof Ag/Si(l 11) Schottky diodes; 1. INTRODUCTION; 2. EXPEMMENTAL; 3. RESULTS; 4. DISCUSSION; ACKNOWLEDGEMENT; REFERENCES; Chapter 5. Difference in Fermi-level pinning position and thermal stability between epitaxial and non-epitaxial Al/Si interfaces; 1. Introduction; 2. Experimental; 3. Results; 4. Discussion; 5. Summary; Acknowledgments; References.
  • CHAPTER 6. HYDROGEN-MEDIATED EPITAXIAL CLUSTERING OF SI(111)<U+001A>3 X <U+001A>3-PB SURFACE STUDIED BY TOF-ICISSAbstract; 1. Introduction; 2. Experimental; 3. Computer simulation; 4. Results and discussion; 5. Summary; REFERENCES; Chapter 7. Schottky Limit on Ideally H-Terminated Unpinned Silicon(111) Surfaces; ACKNOWLEDGEMENTS:; REFERENCES; Chapter 8. Heavy-Ion RBS/ERDA Studies on the Growth of Silver on Hydrogen-Terminated Si(111) Surfaces; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Summary; REFERENCES
  • Chapter 9. Transition Metal/Silicon Interfaces: Interfacial Reaction and Electrical Properties1. INTRODUCTION; 2. EXPERIMENTALS; 3. RESULTS AND DISCUSSION; 4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 10. Contact resistivity and interfacial reaction of V/(001)Si systems; 1. INTRODUCTON; 2. EXPERIMENTAL; 3. RESULTS AND DISCUSSIONS; 4. CONCLUSIONS; REFERENCES; Chapter 11. Initial stage of InAs MBE growth on GaAs substrate; 1. INTRODUCTION; 2. EXPERIMENTS; 3. DISCUSSION; 4. CONCLUSION; ACKNOWLEDGMENTS; REFERENCES.

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