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Plasma processing for VLSI /
Plasma Processing for VLSI.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Academic Press,
1984.
|
| Colección: | VLSI electronics ;
v. 8. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Plasma Processing forVLSI; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. The History of Plasma Processing; I. INTRODUCTION; II. EARLY DEVELOPMENTS; III. INTRODUCTION OF PLASMA PROCESSING TOSEMICONDUCTOR MANUFACTURING, 1971-1978; IV. FULL-SCALE COMMITMENT TO DRY-PROCESSTECHNOLOGY, 1978-1983; V. CHALLENGES AND OPPORTUNITIES FOR PLASMATECHNOLOGY, 1983-1988; REFERENCES; Part A: Deposition; Chapter 2. Sputtering for VLSI; I. INTRODUCTION; II. CONTACT METALLIZATION; III. DIFFUSION BARRIERS; IV. SCHOTTKY DIODE METALLIZATION; V. COSPUTTERED ALUMINUM ALLOYS.
- VI. REFRACTORY SILICIDES IN GATE METALLIZATIONVII. FILM STRESS; VIII. DIELECTRICS; IX. DIE ATTACH; X. SUMMARY AND FUTURE DIRECTIONS; REFERENCES; Chapter 3. Plasma-Enhanced Chemical Vapor Deposition of Transition Metalsand Transition MetalSuicides; I. INTRODUCTION; II. PLASMA-ENHANCED DEPOSITION; III. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 4. Plasma-Enhanced Chemical Vapor Depositionof Dielectrics; 1. INTRODUCTION; II. GENERAL PRINCIPLES; III. SPECIFIC MATERIALS; IV. EQUIPMENT FOR PECVD OF INORGANIC DIELECTRICS; V. SUMMARY; REFERENCES; Part B: Lithography; Chapter 5. Trilayer Resist.
- I. INTRODUCTIONII. PLASMA PROCESSING; III. LIMITATIONS OF SINGLE-LAYER RESIST; IV. FORMATION OF THE PROCESS ETCH MASK; V. UTILIZATION OF THE PROCESS MASK; VI. OPTIONS TO TRILAYER RESIST; VII. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. Plasma Sourcesfor X-Ray Lithography; I. INTRODUCTION; II. X-RAY LITHOGRAPHY; III. X-RAY SOURCE REQUIREMENTS; IV. ELECTRON-IMPACT X-RAY SOURCES; V. SYNCHROTRON X-RADIATION SOURCES; VI. PLASMA X-RAY SOURCES; VII. CONCLUSION; APPENDIX. X-RAY SOURCE CHARACTERIZATION; ACKNOWLEDGMENTS; REFERENCES; Chapter 7. Plasma Sourcesfor Deep-UV Lithography; I. INTRODUCTION.
- II. GENERAL REQUIREMENTS FOR DEEP-UVLITHOGRAPHIC SOURCESIII. DESCRIPTION OF SOURCES; IV. CONCLUSIONS; REFERENCES; Part C: Etching; Chapter 8. Basic Principles of Plasma Etchingfor Silicon Devices; I. INTRODUCTION; II. PRINCIPLE OF ISOTROPIC AND ANISOTROPIC ETCHING; III. PLASMA AND SURFACE CHEMISTRY; IV. SELECTIVITY IN PLASMA ETCHING; V. ETCHING IN PLASMAS THAT PRODUCE FREE FLUORINE; VI. ETCHING OF ORGANIC MATERIAL IN OXYGEN-BASEDPLASMAS; VII. ETCHING IN PLASMAS THAT PRODUCEFLUOROCARBON RADICALS; VIII. ETCHING IN PLASMAS THAT PRODUCE CHLORINE ANDBROMINE ATOMS; IX. HYDROGEN PLASMA ETCHING.
- ACKNOWLEDGMENTREFERENCES; Chapter 9. High-Pressure Etching; NOMENCLATURE; I. INTRODUCTION; II. EQUIPMENT; III. PLASMA PROPERTIES; IV. PROCESSES FOR SPECIFIC MATERIALS; V. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 10. Reactive Ion Etching; I. INTRODUCTION; II. GENERAL PRINCIPLES; III. PROCESS PARAMETER EFFECTS; IV. SPECIFIC MATERIALS AND STRUCTURES; V. EQUIPMENT CONSIDERATIONS; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 11. Ion-Beam Etching (Milling; I. INTRODUCTION; II. PHYSICS OF ION-BEAM ETCHING; III. TECHNIQUES AND PROBLEMS OF ION-BEAM ETCHING; IV. APPLICATIONS.