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Heterostructures and quantum devices /
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focuse...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1994.
|
| Colección: | VLSI electronics ;
v. 24. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Heterostructures and Quantum Devices; Copyright Page; Table of Contents; Contributors; Preface; Chapter 1. Heterostructure and Quantum Well Physics; I. Introduction; II. Electronic Structure of Semiconductors; III. Heterojunction Band Alignment; IV. Quantum Wells; V. Quasi-Equilibrium Properties of Heterostructures; VI. Transport Properties; VII. Summary; References; Chapter 2. Growth of Quantum Confined Structures by Molecular Beam Epitaxy; I. Introduction; II. Molecular Beam Epitaxy Instrumentation; III. Properties of Resonant Tunneling Diodes.
- IV. Multiple Quantum Well StructuresV. Resonant Tunneling Transistors; References; Chapter 3. Metalorganic Chemical Vapor Deposition for the Fabrication of Nanostructure Materials; I. Introduction to Metalorganic Chemical Vapor Deposition; II. Epitaxial Growth of Heterostructures and Quantum Wells by MOCVD; III. Growth of Heterostructures on Nonplanar Substrates; IV. Selective-Area Growth by MOCVD; V. Metalorganic Atomic Layer Epitaxy; VI. Summary and Future Prospects; References; Chapter 4. Heterojunction Bipolar Transistors in III-V Semiconductors; I. Introduction.
- II. Design Objectives for Bipolar TransistorsIII. Materials Engineering in HBTs; IV. Materials Considerations for III-V HBTs; V. HBT Fabrication Technology; VI. HBT Characteristics and Modeling; VII. Applications of HBTs; VIII. HBT Future Development; References; Chapter 5. Heterojunction Bipolar Transistors with Si1-xGex Alloys; I. Introduction; II. Materials for Si/Si1-xGex Heterojunction Bipolar Transistors; III. Band Offsets in the Si/Si1-xGex Materials System; IV. Fabrication and Optimization of Si/Si1-xGex HBTs; V. Summary; References; Chapter 6. Hot Electron Transistors.
- I. IntroductionII. The Semiclassical Approach; III. Concluding Remarks; References; Chapter 7. Quantum Well Heterostructure Lasers; I. Introduction; II. Quantum Well Heterostructure Laser Fundamentals; III. Quantum Well Heterostructure Materials; IV. Quantum Well Laser Structures; V. Summary; References; Chapter 8. Heterojunction Photodetectors for Optical Communications; I. Introduction; II. PIN Photodiodes; III. MSM Photodiodes; IV. Avalanche Photodiodes; V. Conclusion; References; Chapter 9. Quantum Transport; I. Introduction; II. Tunneling Theory; III. Near-Equilibrium Transport.
- IV. Far-from-Equilibrium TransportV. Summary; References; Chapter 10. High-Speed Resonant-Tunneling Diodes; I. Introduction; II. Physical Concepts in Resonant Tunneling; III. Resonant-Tunneling Materials; IV. DBRTD Device Physics; V. Time-Delay Mechanisms; VI. High-Speed Performance Characteristics; VII. High-Speed Experimental Results; VIII. Survey of High-Speed Applications; References; Chapter 11. Resonant-Tunneling Transistors; I. Introduction; II. Device Physics and Characteristics; III. RTD-Based Resonant-Tunneling Transistors; IV. Quantum Well Resonant-Tunneling Transistors.