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Heterostructures and quantum devices /
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focuse...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1994.
|
| Colección: | VLSI electronics ;
v. 24. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a Heterostructures and quantum devices / |c edited by Norman G. Einspruch, William R. Frensley. |
| 264 | 1 | |a San Diego : |b Academic Press, |c �1994. | |
| 300 | |a 1 online resource (xii, 452 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a VLSI electronics ; |v volume 24 | |
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Heterostructures and Quantum Devices; Copyright Page; Table of Contents; Contributors; Preface; Chapter 1. Heterostructure and Quantum Well Physics; I. Introduction; II. Electronic Structure of Semiconductors; III. Heterojunction Band Alignment; IV. Quantum Wells; V. Quasi-Equilibrium Properties of Heterostructures; VI. Transport Properties; VII. Summary; References; Chapter 2. Growth of Quantum Confined Structures by Molecular Beam Epitaxy; I. Introduction; II. Molecular Beam Epitaxy Instrumentation; III. Properties of Resonant Tunneling Diodes. | |
| 505 | 8 | |a IV. Multiple Quantum Well StructuresV. Resonant Tunneling Transistors; References; Chapter 3. Metalorganic Chemical Vapor Deposition for the Fabrication of Nanostructure Materials; I. Introduction to Metalorganic Chemical Vapor Deposition; II. Epitaxial Growth of Heterostructures and Quantum Wells by MOCVD; III. Growth of Heterostructures on Nonplanar Substrates; IV. Selective-Area Growth by MOCVD; V. Metalorganic Atomic Layer Epitaxy; VI. Summary and Future Prospects; References; Chapter 4. Heterojunction Bipolar Transistors in III-V Semiconductors; I. Introduction. | |
| 505 | 8 | |a II. Design Objectives for Bipolar TransistorsIII. Materials Engineering in HBTs; IV. Materials Considerations for III-V HBTs; V. HBT Fabrication Technology; VI. HBT Characteristics and Modeling; VII. Applications of HBTs; VIII. HBT Future Development; References; Chapter 5. Heterojunction Bipolar Transistors with Si1-xGex Alloys; I. Introduction; II. Materials for Si/Si1-xGex Heterojunction Bipolar Transistors; III. Band Offsets in the Si/Si1-xGex Materials System; IV. Fabrication and Optimization of Si/Si1-xGex HBTs; V. Summary; References; Chapter 6. Hot Electron Transistors. | |
| 505 | 8 | |a I. IntroductionII. The Semiclassical Approach; III. Concluding Remarks; References; Chapter 7. Quantum Well Heterostructure Lasers; I. Introduction; II. Quantum Well Heterostructure Laser Fundamentals; III. Quantum Well Heterostructure Materials; IV. Quantum Well Laser Structures; V. Summary; References; Chapter 8. Heterojunction Photodetectors for Optical Communications; I. Introduction; II. PIN Photodiodes; III. MSM Photodiodes; IV. Avalanche Photodiodes; V. Conclusion; References; Chapter 9. Quantum Transport; I. Introduction; II. Tunneling Theory; III. Near-Equilibrium Transport. | |
| 505 | 8 | |a IV. Far-from-Equilibrium TransportV. Summary; References; Chapter 10. High-Speed Resonant-Tunneling Diodes; I. Introduction; II. Physical Concepts in Resonant Tunneling; III. Resonant-Tunneling Materials; IV. DBRTD Device Physics; V. Time-Delay Mechanisms; VI. High-Speed Performance Characteristics; VII. High-Speed Experimental Results; VIII. Survey of High-Speed Applications; References; Chapter 11. Resonant-Tunneling Transistors; I. Introduction; II. Device Physics and Characteristics; III. RTD-Based Resonant-Tunneling Transistors; IV. Quantum Well Resonant-Tunneling Transistors. | |
| 546 | |a English. | ||
| 650 | 0 | |a Heterostructures. | |
| 650 | 0 | |a Electronics |x Materials. | |
| 650 | 6 | |a H�et�erostructures. |0 (CaQQLa)201-0259129 | |
| 650 | 6 | |a �Electronique |x Mat�eriaux. |0 (CaQQLa)201-0016374 | |
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| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 650 | 7 | |a �Electronique |x Mat�eriaux. |2 ram | |
| 700 | 1 | |a Einspruch, Norman G. | |
| 700 | 1 | |a Frensley, William R. | |
| 776 | 0 | 8 | |i Print version: |t Heterostructures and quantum devices |z 0122341244 |w (DLC) 93027565 |w (OCoLC)28723694 |
| 830 | 0 | |a VLSI electronics ; |v v. 24. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780122341243 |z Texto completo |
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