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Surface and interface effects in VLSI /
Surface and Interface Effects in VLSI.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando :
Academic Press,
1985.
|
| Colección: | VLSI electronics ;
v. 10. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Surface and Interface Effects in VLSI; Copyright Page; Table of Contents; List of Contributors; Preface; Part A: Introduction; Chapter 1. Interfaces and Devices; I. INTRODUCTION; II. ELECTRICAL PROPERTIES OF INTERFACES; III. STRUCTURE OF INTERFACES; IV. REPRODUCIBILITY AND STABILITY; V. SUMMARY AND PROGNOSIS; ACKNOWLEDGMENT; REFERENCES; Part B: Structure; Chapter 2. Characterization ofthe Si
- SiO2 Interface; I. INTRODUCTION; II. HISTORICAL BACKGROUND; III. OXIDATION AND DIFFUSION; IV. INTERFACE MORPHOLOGY; V. INTERFACE TRAPS; VI. THEORETICAL MODELS; VII. CONCLUSIONS.
- ACKNOWLEDGMENTSREFERENCES; Chapter 3. Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits; I. INTRODUCTION; II. NEW EXPERIMENTAL TECHNIQUES TO STUDY SURFACES AND INTERFACES ON AN ATOMIC SCALE: SYNCHROTRON RADIATION; III. STRATEGY USED IN THIS WORK; IV. THE UNIFIED DEFECT MODEL FOR III-V INTERFACES AND ITS ORIGIN; V. Ill-V TERNARY AND QUATERNARY ALLOYS; VII. OHMIC CONTACTS; VIII. CHEMISTRY AND INTERMIXING AT III
- V SEMICONDUCTOR-METAL INTERFACES; IX. OTHER APPLICATIONS TO VLSI DEVICES; X. SUMMARY AND CONCLUSIONS; ACKNOWLEDGMENTS.
- VI. THE GaAs SCHOTTKY BARRIERVII. CHANNEL-SUBSTRATE INTERFACE; VIII. OHMIC CONTACTS; IX. DIELECTRIC III-V COMPOUND SEMICONDUCTOR INTERFACES; X. SURFACE AND INTERFACIAL PROPERTIES OF TERNARY AND QUATERNARY III-V ALLOYS; XI. INSTABILITIES IN MISFET; XII. AFTERTHOUGHTS; REFERENCES; Chapter 6. The Role of Boundary Conditions in Near- and Submicrometer-Length Gallium Arsenide Structures; I. INTRODUCTION; II. TRANSPORT THROUGH MOMENT OF THE BOLTZMANN TRANSPORT EQUATION; III. SOLUTION OF THE GOVERNING EQUATIONS; IV. Conclusions; ACKNOWLEDGMENTS; REFERENCES.
- APPENDIX. DIMENSIONLESS EQUATIONS USED IN THE NUMERICAL SIMULATIONSChapter 7. Carrier Transport at the Si
- SiO2 Interface; List of Symbols; I. INTRODUCTION; II. SCALING; III. CARRIER VELOCITY MEASUREMENTS; IV. A MODEL FOR ELECTRON VELOCITY IN SILICON; V. CHARGE PACKET TRANSPORT AND BROADENING; REFERENCES; Index; Contents of Other Volumes.