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Infrared detectors : papers presented at a meeting of the U.S. Speciality Group on Infrared Detectors /

Infrared Detectors is a collection of papers presented at a meeting of the U.S. Speciality Group on Infrared Detectors and deals with a variety of topics related to infrared detectors, such as PbSnTe diodes and detectors, charge coupled devices (CCD), photodiodes, and HgCdTe photoconductive detector...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Moss, T. S. (Trevor Simpson) (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Oxford : Pergamon Press, 1976.
Edición:First edition.
Colección:Infrared physics ; vol. 15, number 4
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a Infrared detectors :  |b papers presented at a meeting of the U.S. Speciality Group on Infrared Detectors /  |c edited by T.S. Moss. 
250 |a First edition. 
264 1 |a Oxford :  |b Pergamon Press,  |c 1976. 
300 |a 1 online resource (249-341 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 0 |a Infrared physics ;  |v vol. 15, number 4 
504 |a Includes bibliographical references. 
588 0 |a Print version record. 
505 0 |6 880-01  |a Front Cover; Infrared Detectors; Copyright Page; Table of Contents; CHAPTER 1. GAMMA NOISE IN CCDs; 1. INTRODUCTION; 2. DEVICE SELECTION; 3. EXPERIMENTAL CONFIGURATION; 4. CLEAR ENVIRONMENT TEST RESULTS; 5. COBALT 60 ENVIRONMENT TEST RESULTS; 6. CONCLUSIONS; REFERENCES; CHAPTER 2. MODEL FOR DEFECTS IN HgCdTe DUE TO ELECTRON IRRADIATION; 1. INTRODUCTION; 2. EXPERIMENTS; 3. DISCUSSION; REFERENCE; CHAPTER 3. EXPERIMENTAL STUDY OF LASER INDUCED TEMPORARY DEGRADATION IN PHOTOVOLTAIC PbSnTe AND HgCdTe DIODES; 1. INTRODUCTION; 2. EXPERIMENTAL PROCEDURE; RESULTS; REFERENCES. 
505 8 |a CHAPTER 4. THERMAL LIMITATIONS IN PbSnTe DETECTORS1. INTRODUCTION; 2. EXPERIMENTAL; 3. EXPERIMENTAL RESULTS AND DISCUSSION; REFERENCES; CHAPTER 5. PERFORMANCE OF PbSnTe DIODES AT MODERATELYREDUCED BACKGROUNDS; INTRODUCTION; ARRAY FABRICATION; EXPERIMENTAL RESULTS AND DISCUSSION; CONCLUSIONS; REFERENCES; CHAPTER 6. ADVANCES IN Hg IMPLANTED Hg1-xCdxTe PHOTOVOLTAIC DETECTORS; 1. INTRODUCTION; 2. DETECTOR MANUFACTURING; 3. DIODE PROPERTIES; 4. DETECTOR PROPERTIES; CONCLUSIONS; REFERENCES; CHAPTER 7. PLANAR Pbo. 8Sno. 2Te PHOTODIODE ARRAY DEVELOPMENT AT THE NIGHT VISION LABORATORY; INTRODUCTION. 
505 8 |a GENERAL OBSERVATIONS AND POTENTIAL PITFALLSCONCLUSION; REFERENCES; CHAPTER 8. PREPARATION OF VAPOR GROWN LEAD-TIN TELLURIDE FOR 8-14 MICROMETER PHOTODIODES; INTRODUCTION; MATERIALS PREPARATION; CRYSTAL GROWTH PROCEDURES; CRYSTAL PROCESSING; ISOTHERMAL ANNEALING; RESULTS; REFERENCES; CHAPTER 9. EVALUATION OF Pbo. 8Sno. 2Te DETECTOR FABRICATION USING SURFACE ANALYSIS; REFERENCES; CHAPTER 10. DETECTIVITY LIMITS FOR DIFFUSED JUNCTION PbSnTe DETECTORS ; 1. INTRODUCTION; 2. THERMAL LIMITS FOR PHOTODIODES; 3. THEORETICAL PERFORMANCE LIMITS FOR Sb-DIFFUSED. 
520 |a Infrared Detectors is a collection of papers presented at a meeting of the U.S. Speciality Group on Infrared Detectors and deals with a variety of topics related to infrared detectors, such as PbSnTe diodes and detectors, charge coupled devices (CCD), photodiodes, and HgCdTe photoconductive detectors. This text has 11 chapters; the first of which investigates the effects of ionizing radiation on CCDs in order to assess their signal processing advantages in a high natural (Van Allen belt) or artificially induced radiation environment. Attention then turns to defects suffered by n-type HgCdTe du. 
546 |a English. 
650 0 |a Infrared detectors  |v Congresses. 
650 0 |a Infrared detectors  |x Congresses. 
650 6 |a D�etecteurs de rayonnement infrarouge  |0 (CaQQLa)201-0019923  |x Congr�es.  |0 (CaQQLa)201-0378208 
650 6 |a D�etecteurs de rayonnement infrarouge  |0 (CaQQLa)201-0019923  |v Congr�es.  |0 (CaQQLa)201-0378219 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a Infrared detectors  |2 fast  |0 (OCoLC)fst00973213 
655 2 |a Congress  |0 (DNLM)D016423 
655 7 |a proceedings (reports)  |2 aat  |0 (CStmoGRI)aatgf300027316 
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655 7 |a Actes de congr�es.  |2 rvmgf  |0 (CaQQLa)RVMGF-000001049 
700 1 |a Moss, T. S.  |q (Trevor Simpson),  |e editor. 
776 0 8 |i Print version:  |t Infrared detectors.  |b First edition  |z 0080205488  |w (OCoLC)4079216 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780080205489  |z Texto completo 
880 8 |6 505-01/(S  |a 4. THEORETICAL PERFORMANCE LIMITS FORCd-DIFFUSED Pbo. 79Sno. 21Te WITH λc = 11 μm AT Τ = 77�ΚREFERENCES; CHAPTER 11. SOME PROPERTIES OF PHOTOVOLTAIC CdxHg1-xTe DETECTORS FOR INFRARED RADIATION; 1. INTRODUCTION; 2. PREPARATION OF DETECTORS; 3. RESULTS AND DISCUSSION; CONCLUSIONS; REFERENCES; LETTER TO THE EDITOR OPTICAL IMMERSION OF HgCdTe PHOTOCONDUCTIVE DETECTORS; LETTER TO THE EDITOR FAR INFRARED ATMOSPHERIC TRANSMISSION MEASUREMENTS IN NORTH-NORWAY.