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VLSI electronics. microstructure science / Volume 3 :

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Einspruch, Norman G. (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Academic Press, 1982.
Colección:VLSI Electronics Microstructure Science.
Temas:
Acceso en línea:Texto completo
Texto completo

MARC

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245 0 0 |a VLSI electronics.  |n Volume 3 :  |b microstructure science /  |c edited by Norman G. Einspruch. 
264 1 |a New York :  |b Academic Press,  |c 1982. 
300 |a 1 online resource :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
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490 1 |a VLSI Electronics Microstructure Science ;  |v v. 3 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a Front Cover; VLSI Electronics: Microstructure Science; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. Impact of VLSI on Computer Architectures; I. Introduction; II. Single-Chip Computers; III. Special-Purpose VLSI Chips; IV. Conclusion; References; Chapter 2. VLSI Design and Design Aid Requirements Charles House and Kent Hardage; I. Introduction; II. State-of-the-Art versus Workhorse Technologies; III. Designer Goals in Workhorse Technologies; IV. Next-Generation Requirements; V. The Problem and the Approach; VI. The Future; Acknowledgments; References. 
505 8 |a Additional ReferencesChapter 3 Design, Fabrication, and Performance of CCD Imagers; I. Introduction; II. Silicon CCD Imagers with Intrinsic Photoresponse; III. PtSi-Silicon Schottky-Barrier Infrared Image Sensors; IV. Other Infrared Imagers; V. Prospects for the Future; Acknowledgments; References; Chapter 4 Ultra-High-Speed GaAs VLSI: Approaches, Potential, and Progress; I. Introduction; II. GaAs Device Approaches for Ultra-High-Speed VLSI; III. Yield Analysis and Implications for VLSI Design; IV. The Schottky Diode-FET Logic Circuit Approach for Ultra-High-Speed GaAs VLSI. 
505 8 |a v. Planar GaAs LSI/VLSI Fabrication TechnologyVI. Experimental Performance Results for Planar SDFL LSI GaAs ICs; VII. Summary; Acknowledgments; References; Chapter 5 Computer Modeling of MOSFETs; I. Introduction; II. MOSFET Device Modeling; III. Results and Discussion; IV. Conclusions; Acknowledgments; References; Chapter 6 The Numerical Physics of Micron-Length and Submicron-Length Semiconductor Devices; I. Introduction; II. The Semiconductor Equations; III. The Boltzmann Transport Equation; IV. Quantum Transport Theory; V. Diffusion; Appendix A. Derivation of the Balance Equations. 
505 8 |a Appendix B. The Wigner Distribution FunctionAcknowledgments; References; Chapter 7 Optical Linewidth Measurements on Photomasks and Wafers; I. Introduction; II. Limitations of Traditional Methods; III. Modeling of the Optical Image; IV. Primary Linewidth-Measurement System; V. Primary Linewidth Measurements on Photomasks; VI. Linewidth Measurements with Conventional Optical Systems on Photomasks; VII. Linewidth Measurements on Other Materials; References; Chapter 8 The Effects of Materials Technology and Fabrication Tolerances on Guided-Wave Optical Communication and Signal Processing. 
505 8 |a I. IntroductionII. Optical Guided-Wave Components in Communications and Signal-Processing Systems; III. The Effect of Fabrication Techniques on the Performance of Optical Guided-Wave Components; IV. Conclusion; References; Chapter 9. The Impact of VLSI on CAM; I. Introduction; II. CAM's Structure; III. VLSI's Impact on CAM; IV. Education and Training; Acknowledgments; References; Index ; Contents of Other Volumes. 
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