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Applied solid state science : advances in materials and device research. Volume 5 /
Applied Solid State Science: Advances in Materials and Device Research, Volume 5 covers articles on devices made with Si, GaAs, and CdS and on the photoconductive insulators of the xerographic process. The book discusses design ideas and fabrication techniques that have raised the efficiency of micr...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Academic Press,
1975.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn892737291 | ||
| 003 | OCoLC | ||
| 005 | 20231120111809.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 141010s1975 nyua ob 001 0 eng d | ||
| 040 | |a OPELS |b eng |e rda |e pn |c OPELS |d E7B |d OCLCF |d YDXCP |d EBLCP |d N$T |d DEBSZ |d MERUC |d IDB |d OCLCQ |d VLY |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 895430747 |a 907151945 |a 1162011511 | ||
| 020 | |a 9781483214740 |q (electronic bk.) | ||
| 020 | |a 1483214745 |q (electronic bk.) | ||
| 020 | |z 9780120029051 | ||
| 035 | |a (OCoLC)892737291 |z (OCoLC)895430747 |z (OCoLC)907151945 |z (OCoLC)1162011511 | ||
| 050 | 4 | |a QC611 | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 072 | 7 | |a SCI |x 022000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/22 |2 23 |
| 245 | 0 | 0 | |a Applied solid state science : |b advances in materials and device research. |n Volume 5 / |c edited by Raymond Wolfe. |
| 264 | 1 | |a New York : |b Academic Press, |c 1975. | |
| 300 | |a 1 online resource (xi, 392 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Applied Solid State Science: Advances in Materials and Device Research; Copyright Page; Table of Contents; LIST OP CONTRIBUTORS; PREFACE; ARTICLES PLANNED FOR FUTURE VOLUMES; Chapter 1. High Efficiency Impatt Diodes; I. Introduction; II. Qualitative Theory of High-Efficiency Impatt Diodes; III. Quantitative Discussions of Modified Read Impatt Designs; IV. Experimental Performance; V. Noise Properties and Parasitic Oscillations; VI. Fabrication; VII. Reliability; VIII. Performance Comparisons and Applications; ACKNOWLEDGMENTS; REFERENCES. | |
| 505 | 8 | |a Chapter 2. Physics of Xerographic PhotoreceptorsI. General Introduction; II. Photoconductor Parameters; III. Experimental Techniques; IV. Theory of Photoinduced Discharge; V. Discussion of Experimental Results; VI. Conclusions; ACKNOWLEDGMENTS; REFERENCES; Chapter 3. Ion Implantation in Silicon-Physics, Processing, and Microelectronic Devices; I. Introduction; II. Ion Implantation-Range and Straggle; III. Damage; IV. Processing Considerations; V. Ion-Implanted Devices-p-n Junctions; VI. Ion-Implanted Devices-Field Effect Transistors; VII. Conclusion; ACKNOWLEDGMENTS; REFERENCES. | |
| 505 | 8 | |a Chapter 4. Cadmium Sulfide Solar CellsI. Introduction; II. CdS-CuxS Photovoltaic Cell Structures; III. Thin Film Solar Cell Technology; IV. Properties of Cadmium Sulfide and Cuprous Sulfide Layers; V. Properties of CdS-CuxS Photovoltaic Cells; VI. Mechanisms of the CdS-CuxS Photovoltaic Cell; VII. Other Photovoltaic Effects in CdS; VIII. Conclusions; REFERENCES; AUTHOR INDEX; SUBJECT INDEX; CONTENTS OF PREVIOUS VOLUMES. | |
| 520 | |a Applied Solid State Science: Advances in Materials and Device Research, Volume 5 covers articles on devices made with Si, GaAs, and CdS and on the photoconductive insulators of the xerographic process. The book discusses design ideas and fabrication techniques that have raised the efficiency of microwave generators; as well as xerography and photoinduced discharge characteristics of photoconductive insulators. The text then describes a great variety of devices, both unipolar and dipolar, which make use of the advantages of ion implantation for introducing impurities into silicon in a most cont. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 700 | 1 | |a Wolfe, Raymond, |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Applied solid state science : Volume 5 |z 9780120029051 |w (OCoLC)810794703 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780120029051 |z Texto completo |