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Applied solid state science. advances in materials and device research / Volume 1 :

Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic p...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Wolfe, Raymond (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Academic Press, 1969.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Applied Solid State Science: Advances in Materials and Device Research; Copyright Page; List of Contributors; Table of Contents; PREFACE; ARTICLES PLANNED FOR FUTURE VOLUMES; Chapter 1. Junction Electroluminescence; I. Introduction; II. Energy-Band Description of Electron States in Crystalline Solids; III. Injection Mechanisms for Electroluminescence in p-n Homojunctions; IV. Electroluminescence Injection Processes Involving Heterojunctions; V. Energy Transport and Carrier Capture Mechanisms in Electroluminescent Devices.
  • VI. Excitation Processes Most Suited to the Identification of Recombination Mechanisms in SemiconductorsVII. Radiative and Competing Nonradiative Carrier Recombination Mechanisms in Semiconductors; VIII. Coherent Stimulated Emission (Laser Action) in Semiconductors; IX. ""State of the Art"" Efficiencies of Electroluminescent Devices; X. Future Prospects; XI. Appendix: A Brief Survey of Very Recent Work; References; Chapter 2. Metal-Insulator-Semiconductor (MIS) Physics; I. Introduction; II. Ideal Metal-Insulator-Semiconductor Diode; III. Surface States.
  • IV. Surface-State Measurement TechniquesV. Charges in the Insulator and Their Effect on the Semiconductor Surface; VI. Effects of Metal Work-Function Differences, Crystal Orientation, Temperature, Illumination, and Irradiation on MIS Characteristics; VII. Surface Varactor, Avalanche, Tunneling, and Electroluminescence in MIS Diodes; VIII. Carrier Transport in Insulating Films; References; Chapter 3. Ion Implantation in Semiconductors; I. Introduction; II. Ion Range Distributions; III. Lattice Disorder; IV. Lattice Location of Implanted Atoms; V. Electrical Characteristics.
  • VI. Application of Ion Implantation to Device FabricationReferences; Chapter 4. Electron Transport through Insulating Thin Films; I. Introduction; II. Theory: Barrier-Limited Mechanisms; III. Theory: Bulk Conduction Phenomena; IV. Experimental Results: Comparison with Theory; References; AUTHOR INDEX; SUBJECT INDEX.