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Applied solid state science. advances in materials and device research / Volume 1 :
Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic p...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Academic Press,
1969.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 019 | |a 895430743 |a 915158545 | ||
| 020 | |a 9781483214702 |q (electronic bk.) | ||
| 020 | |a 1483214702 |q (electronic bk.) | ||
| 020 | |z 9780120029013 | ||
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| 245 | 0 | 0 | |a Applied solid state science. |n Volume 1 : |b advances in materials and device research / |c [edited by Raymond Wolfe]. |
| 264 | 1 | |a New York : |b Academic Press, |c 1969. | |
| 300 | |a 1 online resource : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Applied Solid State Science: Advances in Materials and Device Research; Copyright Page; List of Contributors; Table of Contents; PREFACE; ARTICLES PLANNED FOR FUTURE VOLUMES; Chapter 1. Junction Electroluminescence; I. Introduction; II. Energy-Band Description of Electron States in Crystalline Solids; III. Injection Mechanisms for Electroluminescence in p-n Homojunctions; IV. Electroluminescence Injection Processes Involving Heterojunctions; V. Energy Transport and Carrier Capture Mechanisms in Electroluminescent Devices. | |
| 505 | 8 | |a VI. Excitation Processes Most Suited to the Identification of Recombination Mechanisms in SemiconductorsVII. Radiative and Competing Nonradiative Carrier Recombination Mechanisms in Semiconductors; VIII. Coherent Stimulated Emission (Laser Action) in Semiconductors; IX. ""State of the Art"" Efficiencies of Electroluminescent Devices; X. Future Prospects; XI. Appendix: A Brief Survey of Very Recent Work; References; Chapter 2. Metal-Insulator-Semiconductor (MIS) Physics; I. Introduction; II. Ideal Metal-Insulator-Semiconductor Diode; III. Surface States. | |
| 505 | 8 | |a IV. Surface-State Measurement TechniquesV. Charges in the Insulator and Their Effect on the Semiconductor Surface; VI. Effects of Metal Work-Function Differences, Crystal Orientation, Temperature, Illumination, and Irradiation on MIS Characteristics; VII. Surface Varactor, Avalanche, Tunneling, and Electroluminescence in MIS Diodes; VIII. Carrier Transport in Insulating Films; References; Chapter 3. Ion Implantation in Semiconductors; I. Introduction; II. Ion Range Distributions; III. Lattice Disorder; IV. Lattice Location of Implanted Atoms; V. Electrical Characteristics. | |
| 505 | 8 | |a VI. Application of Ion Implantation to Device FabricationReferences; Chapter 4. Electron Transport through Insulating Thin Films; I. Introduction; II. Theory: Barrier-Limited Mechanisms; III. Theory: Bulk Conduction Phenomena; IV. Experimental Results: Comparison with Theory; References; AUTHOR INDEX; SUBJECT INDEX. | |
| 520 | |a Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Fisica Do Estado Solido. |2 larpcal | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 700 | 1 | |a Wolfe, Raymond, |e editor. | |
| 776 | 0 | 8 | |i Print version: |t Applied solid state science |z 0120029014 |w (DLC) 68059160 |w (OCoLC)11391611 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780120029013 |z Texto completo |