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Semiconductor superlattices and interfaces : Varenna on Lake Como, Villa Monastero, 25 June-5 July 1991 /

This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: International School of Physics "Enrico Fermi" Varenna, Italy, Societ�a italiana di fisica
Otros Autores: Stella, A. (Angiolino) (Editor ), Miglio, L. (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam : North-Holland, 1993.
Colección:Proceedings of the International School of Physics "Enrico Fermi" ; course 117
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Semiconductor Superlattices and Interfaces; Copyright Page; Table of Contents; Preface; Chapter 1. The evolution of semiconductor quantum structures. Do-it-yourself quantum mechamics; 1. Introduction; 2. Epitaxy and superlattice growth; 3. Resonant tunneling in an electric field; 4. Transport and optical properties in superlattices and quantum wells subject to an applied electric field; 5. Conclusion; Chapter 2. Physics and engineering of heterojunction band lineups; 1. Introduction: from bandgap science to bandgap engineering.
  • 2. Internal photoemission: a new weapon in today's experimental arsenal for studying heterojunction band lineups3. Heterojunction band lineup control: empirical considerations ; 4. Practical cases of band lineup control ; 5. Future avenues ; Chapter 3. Theoretical models on the formation of semiconductor interface barriers; 1. Introduction; 2. Metal-semiconductor interfaces; 3. Semiconductor-semiconductor interfaces; 4. Conclusions; Chapter 4. Semiconductor interfaces; 1. Introduction; 2. Isovalent substitutions; 3. Heterovalent substitutions; 4. Band offsets and linear-response scheme.
  • 5. Heterovalent intralayers: interface dipoles6. Conclusions; Chapter 5. The strain release in mismatched semiconductor heterostructures; 1. Introduction; 2. Formalism and results of the elasticity theory; 3. Critical-thickness theories; 4. Experimental techniques; 5. Experimental results and discussion; Chapter 6. Optical investigation of interfaces; 1. Introduction; 2. Si-electrolyte and Si-Si02 interface; 3. Thick epitaxial Si layers; 4. Highly doped Si layers; Chapter 7. Optical properties of silicides; 1. Introduction; 2. Chemical bond and electronic states in silicides.
  • 3. Optical properties of transition metal silicides pagChapter 8. Quantum size effect in low-dimensional semiconductors; 1. Theoretical aspects; 2. Fabrication of quantum wires and quantum dots; 3. Main experiments; Chapter 9. Relaxation dynamics in GaAs/ZAlx. Ga1_x. As quantum well heterostructures; 1. Introduction; 2. Experimental; 3. Samples; 4. Carrier recombination in GaAs/Al0.3 Ga0.7As quantum wells; 5. Tunnelling in ADQW structures; 6. Summary; Chapter 10. Excitons and polaritons in quantum wells; 1. Introduction; 2. Excitons in semiconductors; 3. Exciton-polariton states.
  • 4. Excitons in quantum wells5. Quantum well polaritons; 6. Extension to quantum wires and quantum dots; Chapter 11. Envelope function approach to electronic states in heterostructures; 1. Introduction; 2. Envelope function description of electronic states; 3. Examples of results for some systems; 4. External magnetic fields; 5. Excitons in quantum wells; Chapter 12. Ab initio calculation of phonon spectra in semiconductors: from pure crystals to alloys and superlattices; 1. Introduction; 2. Theoretical framework and computational techniques; 3. Some results for pure crystals.