1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /

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1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discuss...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Vacuum Congress Stuttgart, Germany
Otros Autores: Adam, Hans (Editor )
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Francés
Alemán
Publicado: Oxford : Pergamon Press, 1967.
Temas:
Vacuum technology > Congresses.
Vide (Technologie) > Congr�es.
TECHNOLOGY & ENGINEERING > Mechanical.
Vacuum technology
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
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1965 transactions of the Third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany.
Publicado 1967
Texto completo
Electrónico Congresos, conferencias eBook
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