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1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /
1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discuss...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés Francés Alemán |
| Publicado: |
Oxford :
Pergamon Press,
1967.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; 1965 Transactions of the Third International Vacuum Congress, Part II; Copyright Page; Table of Contents; PART II; SESSION 5: Evaporation and Thin Films; Chapter 1. A new technique for producing epitaxial silicon layers using ultra-thin alloy zones; Introduction; Experimental technique; Discussion; Acknowledgement; Discussion; References; Chapter 2. ""Perfect epitaxy"" of silicon films on silicon as seen in large-area X-ray topographs; Introduction; X-ray diffraction microscopy techniques; I. High intensity X-ray diffraction microscopy by extinction contrast.
- II. Scanning oscillator technique(SOT)III. Epitaxy of silicon on silicon; References; Chapter 3. Epitaxial growth of Si on Si in ultra-high vacuum; Introduction; Experimental arrangement; Results; Discussion and conclusion; Acknowledgements; References; Chapter 4. �Evaporation de permalloy par bombardement �electronique; Chapter 5. Thin film semiconductors; 1. Introduction; 2. Electronic properties of thin films; 3. Methods for thin film deposition and perfection of semiconductor films; 4. Conclusions with respect to thin film active devices; References.
- Chapter 6. Some experiments in the reactive evaporation of tantalum oxideDiscussion; Chapter 7. Preparation of high mobility thin films of indium antimonide; 1. Introduction; 2. Methods of obtaining thin films of lll-V compounds; 3. Experimental; 4. Experimental data; 5. Conclusions; References; Chapter 8. Thermal shock effects in quartz crystal microbalances; Introduction; Experimental arrangement; Experimental results; Discussion; References; Chapter 9. Weighing at low pressures; References; Chapter 10. Impact activated sorption as a means for gas incorporation in sputtered thin films.
- Introduction1. Argon cleanup experiment; II. Glow discharge experiment; IIl. Gas analysis experiment; Acknowledgements; References; Chapter 11. Thin-film hafnium-hafnium oxide capacitors for high temperature operation; Introduction; Thin-film capacitor preparation; Thin-film capacitor characteristics; Acknowledgements; References; Chapter 12. �Uber die Aggregation von Silber- und Goldaufdampfschichten, die auf Kohlefolien erh�ohter Temperatur im Ultrahochvakuum niedergeschlagen wurden; Ausgangssituation; Neue Ergebnisse; Schlussfolgerungen; Literaturverzeichnis.
- SESSION 6: Vacuum Systems and Pumping ProceduresChapter 13. Pumpzeitberechnung von Vakuumanlagen bei variabler Wandtemperatur; Literaturhinweise; Chapter 14. Design considerations for vacuum systems with built-in getter ion and sublimation pumps; COMPONENTS; Chapter 15. Speed measuring of ion getter pumps by the""three-gauge"" method; Introduction; Method; Results and discussion; Conclusion; References; Chapter 16. The measurement of water vapour pressure in vacuum systems using a quartz crystal oscillator; 1. Introduction; 2. Preparation of quartz crystals as sorption detectors.