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1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /
1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discuss...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés Francés Alemán |
| Publicado: |
Oxford :
Pergamon Press,
1967.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Vacuum Congress |n (3rd : |d 1965 : |c Stuttgart, Germany) | |
| 245 | 1 | 0 | |a 1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. |n Volume 2, |p Part II, |p Sessions 5-8 / |c editor: H. Adam. |
| 264 | 1 | |a Oxford : |b Pergamon Press, |c 1967. | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 500 | |a Added title pages in French and German. | ||
| 500 | |a Papers in English, French or German. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; 1965 Transactions of the Third International Vacuum Congress, Part II; Copyright Page; Table of Contents; PART II; SESSION 5: Evaporation and Thin Films; Chapter 1. A new technique for producing epitaxial silicon layers using ultra-thin alloy zones; Introduction; Experimental technique; Discussion; Acknowledgement; Discussion; References; Chapter 2. ""Perfect epitaxy"" of silicon films on silicon as seen in large-area X-ray topographs; Introduction; X-ray diffraction microscopy techniques; I. High intensity X-ray diffraction microscopy by extinction contrast. | |
| 505 | 8 | |a II. Scanning oscillator technique(SOT)III. Epitaxy of silicon on silicon; References; Chapter 3. Epitaxial growth of Si on Si in ultra-high vacuum; Introduction; Experimental arrangement; Results; Discussion and conclusion; Acknowledgements; References; Chapter 4. �Evaporation de permalloy par bombardement �electronique; Chapter 5. Thin film semiconductors; 1. Introduction; 2. Electronic properties of thin films; 3. Methods for thin film deposition and perfection of semiconductor films; 4. Conclusions with respect to thin film active devices; References. | |
| 505 | 8 | |a Chapter 6. Some experiments in the reactive evaporation of tantalum oxideDiscussion; Chapter 7. Preparation of high mobility thin films of indium antimonide; 1. Introduction; 2. Methods of obtaining thin films of lll-V compounds; 3. Experimental; 4. Experimental data; 5. Conclusions; References; Chapter 8. Thermal shock effects in quartz crystal microbalances; Introduction; Experimental arrangement; Experimental results; Discussion; References; Chapter 9. Weighing at low pressures; References; Chapter 10. Impact activated sorption as a means for gas incorporation in sputtered thin films. | |
| 505 | 8 | |a Introduction1. Argon cleanup experiment; II. Glow discharge experiment; IIl. Gas analysis experiment; Acknowledgements; References; Chapter 11. Thin-film hafnium-hafnium oxide capacitors for high temperature operation; Introduction; Thin-film capacitor preparation; Thin-film capacitor characteristics; Acknowledgements; References; Chapter 12. �Uber die Aggregation von Silber- und Goldaufdampfschichten, die auf Kohlefolien erh�ohter Temperatur im Ultrahochvakuum niedergeschlagen wurden; Ausgangssituation; Neue Ergebnisse; Schlussfolgerungen; Literaturverzeichnis. | |
| 505 | 8 | |a SESSION 6: Vacuum Systems and Pumping ProceduresChapter 13. Pumpzeitberechnung von Vakuumanlagen bei variabler Wandtemperatur; Literaturhinweise; Chapter 14. Design considerations for vacuum systems with built-in getter ion and sublimation pumps; COMPONENTS; Chapter 15. Speed measuring of ion getter pumps by the""three-gauge"" method; Introduction; Method; Results and discussion; Conclusion; References; Chapter 16. The measurement of water vapour pressure in vacuum systems using a quartz crystal oscillator; 1. Introduction; 2. Preparation of quartz crystals as sorption detectors. | |
| 520 | |a 1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discusses the potential advantages of the technique and the mechanism of the epitaxial growth process. Organized into four sessions encompassing 42 chapters, this volume starts with an overview of the exact influence of the thin alloy layer. This text then describes the novel X-ray method and its application to semic. | ||
| 650 | 0 | |a Vacuum technology |v Congresses. | |
| 650 | 6 | |a Vide (Technologie) |0 (CaQQLa)201-0019001 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Vacuum technology |2 fast |0 (OCoLC)fst01163626 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a proceedings (reports) |2 aat |0 (CStmoGRI)aatgf300027316 | |
| 655 | 7 | |a Conference papers and proceedings |2 fast |0 (OCoLC)fst01423772 | |
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| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 700 | 1 | |a Adam, Hans, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a International Vacuum Congress (3rd : 1965 : Stuttgart, Germany). |t 1965 transactions of the Third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany |z 9781483156309 |w (OCoLC)92792172 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080121260 |z Texto completo |