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1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /
1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discuss...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
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| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés Francés Alemán |
| Publicado: |
Oxford :
Pergamon Press,
1967.
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| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | 1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750�C. This book discusses the potential advantages of the technique and the mechanism of the epitaxial growth process. Organized into four sessions encompassing 42 chapters, this volume starts with an overview of the exact influence of the thin alloy layer. This text then describes the novel X-ray method and its application to semic. |
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| Notas: | Added title pages in French and German. Papers in English, French or German. |
| Descripción Física: | 1 online resource |
| ISBN: | 9781483156309 1483156303 |