Metal-semiconductor contacts and devices /

Metal - Semiconductor Contacts and Devices.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Cohen, Simon S.
Otros Autores: Gildenblat, Gennady Sh
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Orlando : Academic Press, 1986.
Colección:VLSI electronics ; v. 13.
Temas:
Semiconductor-metal boundaries.
Electric contacts.
Contacts m�etal-semiconducteur.
Contacts �electriques.
TECHNOLOGY & ENGINEERING > Mechanical.
Electric contacts
Semiconductor-metal boundaries
Metall-Halbleiter-Kontakt
Integrated circuits
Acceso en línea:Texto completo
Texto completo
Tabla de Contenidos:
  • Front Cover; Metal
  • Semiconductor Contacts and Devices; Copyright Page; Dedication; Table of Contents; Preface; Chapter 1. Introduction; REFERENCES; Chapter 2. Electrical Characteristics of the Metal
  • Semiconductor Interface; 2.1. INTRODUCTION; 2.2. THE INTERFACE BARRIER AND SPACE CHARGE REGION; 2.3. GENERALIZED TRANSPORT THEORY AT LOW DOPANT LEVELS; 2.4. TUNNELING ACROSS THE INTERFACE; 2.5. MINORITY CARRIER INJECTION RATIO; REFERENCES; Chapter 3. Experimental Methods of Barrier Height Determination; 3.1. INTRODUCTION; 3.2. THE FORWARD BIAS l-V METHOD
  • 3.3. FORWARD BIAS l-V METHOD FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE3.4. THE CAPACITANCE-VOLTAGE METHOD; 3.5. THE CORRELATION BETWEEN THE BARRIER HEIGHT AND THE IDEALITY FACTOR OF THE SCHOTTKY DIODE; 3.6. REVERSE BIAS CURRENT-VOLTAGE CHARACTERISTICS; 3.7. THE PHOTOEXCITATION METHOD; REFERENCES; Chapter 4. Test Structures for Ohmic Contact Characterization; 4.1. INTRODUCTION; 4.2. SIMPLE METHODS FOR CONTACT RESISTANCE MEASUREMENTS; 4.3. TRANSFER LENGTH METHOD; 4.4. THE CIRCULAR TRANSMISSION LINE MODEL; 4.5. FINITE DEPTH EFFECTS; 4.6. THE FOUR-TERMINAL RESISTOR; REFERENCES
  • 6.7. REFRACTORY METAL CONTACTS TO SILICON6.8. OTHER METAL-SILICON SYSTEMS; REFERENCES; Chapter 7. Other Metal
  • Semiconductor Contact Systems; 7.1. INTRODUCTION; 7.2. OHMIC CONTACTS TO III
  • V COMPOUND SEMICONDUCTORS; 7.3. POLYSILICON EMITTER CONTACTS; REFERENCES; Chapter 8. Metal
  • Semiconductor Devices; 8.1. INTRODUCTION; 8.2. SCHOTTKY BARRIER MOS TRANSISTORS; 8.3. SCHOTTKY DIODES IN BIPOLAR INTEGRATED CIRCUITS; 8.4. THE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; REFERENCES; Appendix I: Modified Bessel Functions; Appendix II: Thin-Film Resistors
  • Appendix III: Physical Properties of Common Semiconductor MaterialsAppendix IV: Selected Properties of Commonly Used Metals; Index
  • Chapter 5. Contact Fabrication Procedures5.1. INTRODUCTION; 5.2. BASIC ELEMENTS OF IC DEVICE PROCESSING; 5.3. THE CHEMISTRY OF CONTACT HOLE OPENING; 5.4. CONTACT GEOMETRY; 5.5. METAL DEPOSITION TECHNIQUES; 5.6. CONTACT METALLIZATION DEFINITION TECHNIQUES; 5.7. DETAILS OF SHALLOW JUNCTION FORMATION; REFERENCES; Chapter 6. Practical Ohmic Contacts to Silicon; 6.1. INTRODUCTION; 6.2. REQUIREMENTS ON OHMIC CONTACTS FOR VLSI; 6.3. METALLURGICAL CONSIDERATIONS; 6.4. CONTACT ELECTROMIGRATION; 6.5. ALUMINUM-BASED CONTACT METALLIZATIONS; 6.6. SILICIDE CONTACT METALLIZATION

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