Physics of semiconductor lasers /
Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these...
Clasificación: | Libro Electrónico |
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Autor principal: | |
Otros Autores: | , |
Formato: | Electrónico eBook |
Idioma: | Inglés Polaco |
Publicado: |
Amsterdam ; New York :
North-Holland : Polish Scientific Publishers,
1991.
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Temas: | |
Acceso en línea: | Texto completo |
MARC
LEADER | 00000cam a2200000 i 4500 | ||
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001 | SCIDIR_ocn881851417 | ||
003 | OCoLC | ||
005 | 20231120111642.0 | ||
006 | m o d | ||
007 | cr cnu---unuuu | ||
008 | 140627s1991 ne a ob 001 0 eng d | ||
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020 | |a 9781483291659 |q (electronic bk.) | ||
020 | |a 1483291650 |q (electronic bk.) | ||
020 | |z 0444987371 | ||
020 | |z 9780444987372 | ||
035 | |a (OCoLC)881851417 | ||
041 | 1 | |a eng |h pol | |
050 | 4 | |a TA1700 |b .M76 1991eb | |
072 | 7 | |a TEC |x 009070 |2 bisacsh | |
082 | 0 | 4 | |a 621.36/6 |2 22 |
084 | |a UH 5616 |2 rvk | ||
100 | 1 | |a Mroziewicz, Bohdan, |d 1933- | |
245 | 1 | 0 | |a Physics of semiconductor lasers / |c by Bohdan Mroziewicz, Maciej Bugajski, W�odzimierz Nakwaski ; translated by Jolanta Krauze. |
264 | 1 | |a Amsterdam ; |a New York : |b North-Holland : |b Polish Scientific Publishers, |c 1991. | |
264 | 2 | |a New York, NY : |b Distribution for the USA and Canada, Elsevier Science Pub. Co. | |
300 | |a 1 online resource (473 pages) : |b illustrations | ||
336 | |a text |b txt |2 rdacontent | ||
337 | |a computer |b c |2 rdamedia | ||
338 | |a online resource |b cr |2 rdacarrier | ||
500 | |a Translated from Polish. | ||
504 | |a Includes bibliographical references and index. | ||
520 | |a Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor lasers and the trends in their development. | ||
588 | 0 | |a Print version record. | |
505 | 0 | |a Front Cover; Physics of Semiconductor Lasers; Copyright Page; Table of Contents; 1. Preface; Chapter 2. Physical Principles of the Operation of Semiconductor Lasers; 2.1 Recombination Processes Occurring in Semiconductors; 2.2 Effect of Dopants on the Band Structure; 2.3 Many-Body Interactions; 2.4 Stimulated Emission and Gain; 2.5 Optical Matrix Element; Calculation of the Absorption and Emission Spectra; 2.6 Threshold Condition. Spectral Gain Distribution; 2.7 Gain Saturation; 2.8 Carrier Transport in Heterojunctions; 2.9 Carrier Confinement in Heterostructures; References | |
505 | 8 | |a Chapter 3. Basic Techniques for Fabricating Semiconductor Lasers3.1 Semiconductor Materials; 3.2 Methods of Fabricating Semiconductor Structures; References; Chapter 4. The Design and Basic Characteristics of Semiconductor Lasers; 4.1 Fabry-Perot Cavity Lasers; 4.2 Distributed Feedback Lasers; 4.3 Quantum Well Lasers; References; Chapter 5. Review of the Structures and Properties of Fabry-Perot Cavity Junction Lasers; 5.1 Discrete Junction Lasers; General Considerations; 5.2 Discrete Stripe Junction Lasers; Selected Topics; 5.3 Semiconductor Laser Arrays; 5.4 Surface Emitting Lasers | |
505 | 8 | |a 8.1 Distribution of Heat Sources in a Junction Laser8.2 Heat Conduction Equation; 8.3 Thermal Resistance of the Heat Sink; 8.4 Thermal Parameters; 8.5 Comparison between the cw and Pulsed Operations of Junction Lasers; 8.6 Thermal Properties of Junction Lasers Operating cw; 8.7 Thermal Properties of Junction Lasers Under Pulsed Conditions; 8.8 Thermal Properties of Junction Laser Arrays; 8.9 Method for Controlling the Manufacture Quality of Junction Lasers Based on Their Thermal Properties; References; Chapter 9. Principles of Modelling the Physical Phenomena in Junction Lasers | |
505 | 8 | |a 9.1 Modelling the Electrical Phenomena9.2 Modelling Optical Phenomena; 9.3 Calculation Procedure; References; Chapter 10. Reliability of LEDs and Junction Lasers; 10.1 Degradation of the Resonator Facets in a Junction Laser; 10.2 Degradation of the Contacts; 10.3 Bulk Degradation of the Material; 10.4 Methods for Accelerated Ageing of Junction Lasers and LEDs; References; List of Abbreviations; Subject Index; List of Main Symbols | |
650 | 0 | |a Semiconductor lasers. | |
650 | 2 | |a Lasers, Semiconductor |0 (DNLM)D054023 | |
650 | 6 | |a Lasers �a semi-conducteurs. |0 (CaQQLa)201-0012628 | |
650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
650 | 7 | |a Semiconductor lasers |2 fast |0 (OCoLC)fst01112170 | |
650 | 7 | |a Halbleiterlaser |2 gnd |0 (DE-588)4139556-6 | |
700 | 1 | |a Bugajski, Maciej, |d 1948- | |
700 | 1 | |a Nakwaski, W�odzimierz, |d 1947- | |
776 | 0 | 8 | |i Print version: |a Mroziewicz, Bohdan, 1933- |t Physics of semiconductor lasers |z 0444987371 |w (DLC) 90041098 |w (OCoLC)21972917 |
856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444987372 |z Texto completo |