|
|
|
|
| LEADER |
00000cam a2200000 i 4500 |
| 001 |
SCIDIR_ocn881851382 |
| 003 |
OCoLC |
| 005 |
20231120111641.0 |
| 006 |
m o d |
| 007 |
cr cnu---unuuu |
| 008 |
140627s1969 enka o 000 0 eng d |
| 040 |
|
|
|a OPELS
|b eng
|e rda
|e pn
|c OPELS
|d EBLCP
|d DEBSZ
|d OCLCQ
|d YDXCP
|d MERUC
|d OCLCQ
|d UKAHL
|d OCLCQ
|d OCLCO
|d OCLCQ
|d OCLCO
|
| 019 |
|
|
|a 895430338
|
| 020 |
|
|
|a 9781483145914
|q (electronic bk.)
|
| 020 |
|
|
|a 1483145913
|q (electronic bk.)
|
| 020 |
|
|
|z 008015543X
|
| 020 |
|
|
|z 9780080155432
|
| 035 |
|
|
|a (OCoLC)881851382
|z (OCoLC)895430338
|
| 050 |
|
4 |
|a TK7853
|b .M18 1969eb
|
| 082 |
0 |
4 |
|a 530.41
|2 22
|
| 245 |
0 |
0 |
|a Festkorper probleme.
|n 9 :
|b advances in solid state physics /
|c plenary lectures of the Progressional Group "Semiconductor Physics" of the German Physical Society, Munich, March 19-22, 1969 and invited papers of the European meeting of the I.E.E.E. "Semiconductor Device Research", Munich, March 24-27, 1969, edited by O. Madelung.
|
| 246 |
3 |
|
|a Advances in solid state physics
|
| 264 |
|
1 |
|a Oxford :
|b Pergamon,
|c 1969.
|
| 300 |
|
|
|a 1 online resource (391 pages) :
|b illustrations
|
| 336 |
|
|
|a text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a computer
|b c
|2 rdamedia
|
| 338 |
|
|
|a online resource
|b cr
|2 rdacarrier
|
| 588 |
0 |
|
|a Print version record.
|
| 504 |
|
|
|a References.
|
| 505 |
0 |
|
|a Front Cover; Festk�orper Probleme IX: Advances in Solid State Physics; Copyright Page; Vorwort; Table of Contents; Chapter 1. Struktur und Bindungsverh�altnisse in amorphen Halbleitern; I. Einleitung; 2. Allgemeines �uber die Struktur von Gl�asern; 3. Halbmetalle im glasigen Zustand; 4. Bindung �uber s-Zust�ande in Kristallen und Gl�asern; 5. Aufbau der Schmelzen von Germanium und Antimon; 6. Bildung und Struktur von Chalkogenidgl�asern; 7. Literatur; Chapter 2. Charge transport in non-crystalline semiconductors; 1. Introduction; impurity conduction; 2. Glasses and evaporated films.
|
| 505 |
8 |
|
|a 3. Amorphous germanium4. Switching; 5. References; Chapter 3. Optische und elektrische Eigenschaften von amorphen Halbleitern; 1. Einleitung; 2. Optische Eigenschaften; 3. Elektrische Eigenschaften; 4. Abschlie�ende Bemerkungen; 5. Literaturverzeichnis; Chapter 4. Light Scattering in Semiconductors; 1. Introduction; 2. Experimental Methods; 3. Phonons; 4. Electrons; Acknowledgments; 6. References; Chapter 5. Der Jahn-Teller-Effekt; 1. Einleitung; 2. Der Jahn-Teller-Effekt von E-Zust�anden; 3. Der Jahn-Teller-Effekt von T-Zust�anden in Oh-Symmetrie; 4. Schlu�betrachtungen; Literatur.
|
| 505 |
8 |
|
|a Chapter 6. Elektrische Instabilit�aten in Halb- und Photoleitern1. Einleitung; 2. Dom�anen und Filamente in Halbleitern mit fallender differentieller Kennlinie; 3. Einiges zur ph�anomenologischen Theorie, station�are Zust�ande; 4. Nichtstation�are Zust�ande; 5. Physikalische Mechanismen; 6. Anhang; 7. Literatur; Chapter 7. �Uber die Physik des Lawinendurchbruches in Halbleitern; 1. Einf�uhrung; 2. Mikroplasmen und perfekte Uberg�ange; 3. Ionisationskoeffizienten und Durchbruchspannung; 4. Elektronenemission; 5. Lichtemission aus pn-�Uberg�angen; 6. Schlu�; 7. Literatur.
|
| 505 |
8 |
|
|a Chapter 8. Analytic Properties of Thermodynamic Functions and Phase Transitions1. Introduction; 2. Experimental results about phase transitions; 3. The present status of theory; 4. Phases as holomorphic regions in the complex temperature plane; 5. Thermodynamic functions of several physical complex variables: microscopic aspects; 6. Holomorphic thermodynamic functions: thermodynamical aspects; References; Chapter 9. Die elektronische Bandstruktur in �au�eren Magnetfeldern; 1. Einleitung; 2. Phasenintegral-Quantisierung; 3. Magnetic Breakdown; 4. Die magnetische Translationsgruppe.
|
| 505 |
8 |
|
|a 5. Stark gebundene Elektronen6. Nahezu freie Elektronen; 7. De Haas-van Alphen-Amplituden; 8. Literatur; Chapter 10. Physical Properties of Transferred-Electron and Avalanche MicrowaveDevices; 1. Introduction; 2. Transferred-electron devices; 3. Avalanche multiplication devices; 4. Concluding remarks; 5. References; Chapter 11. Neue Ergebnisse an MIS-Transistoren; Literatur; Chapter 12. The Application of Ion Implantation to Semiconductor Devices; Introduction; 1. Apparatus; 2. Doping Profiles; 3. Electrical properties of implanted layers; 4. Devices; 5. Compound semiconductors; Conclusions.
|
| 650 |
|
0 |
|a Semiconductors.
|
| 650 |
|
0 |
|a Solid state physics.
|
| 650 |
|
2 |
|a Semiconductors
|0 (DNLM)D012666
|
| 650 |
|
6 |
|a Semi-conducteurs.
|0 (CaQQLa)201-0318258
|
| 650 |
|
6 |
|a Physique de l'�etat solide.
|0 (CaQQLa)201-0015752
|
| 650 |
|
7 |
|a semiconductor.
|2 aat
|0 (CStmoGRI)aat300015117
|
| 650 |
|
7 |
|a Semiconductors
|2 fast
|0 (OCoLC)fst01112198
|
| 650 |
|
7 |
|a Solid state physics
|2 fast
|0 (OCoLC)fst01125456
|
| 700 |
1 |
|
|a Madelung, O.
|q (Otfried)
|
| 710 |
2 |
|
|a Deutsche Physikalische Gesellschaft (1963- )
|
| 711 |
2 |
|
|a IEEE Semiconductor Device Research European Meeting
|d (1969 :
|c Munich, Germany)
|
| 776 |
0 |
8 |
|i Print version:
|t Festkorper probleme. 9
|z 008015543X
|w (OCoLC)12031524
|
| 856 |
4 |
0 |
|u https://sciencedirect.uam.elogim.com/science/book/9780080155432
|z Texto completo
|
