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High excitation and short pulse phenomena : proceedings of the third Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 2-6 July 1984 /
High Excitation and Short Pulse Phenomena.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
North Holland,
1985.
|
| Colección: | Journal of luminescence ;
volume 30, nos. 1-4. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; High Excitation and Short Pulse Phenomena; Copyright Page; Preface; Introduction; Table of Contents; PART 1: ELECTRON-HOLE PLASMAS; Chapter 1. Electron-hole plasma generation and evolution in semiconductors; 1. Electron-hole plasma energy; 2. Dielectric constant in the presence of an electron-hole plasma; 3. Generation of an electron-hole plasma by laser beam absorption; 4. Electron-hole plasma evolution; 5. Fascinating melting at T = 0; References; Chapter 2. Non-equilibrium plasma: theory and experiment; 1. Introduction; 2. The system; 3. The homogeneous state.
- 4. Influence of interactions5. The inhomogeneous state; 6. Macroscopic variables; 7. Transport coefficients; 8. Balance equations; 9. Velocities; 10. Conclusions; References; Chapter 3. Plasma expansion and band-gap renormalization in CdTe and GaP; 1. Introduction; 2. Experimental; 3. Renormalized band-gap in GaP; 4. Excite and probe experiment (optical gain); 5. Optical gain and absorption; 6. Luminescence experiments in CdTe; 7. Band-gap renormalization in CdTe; 8. Conclusions; References and footnotes; Chapter 4. Inelastic light scattering in highly excited GaAs; 1. Experimental details.
- 2. Theoretical background3. Experimental results and discussion; 4. Light scattering from non-equilibrium EHP; 5. Density-temperature relation of quasi-equilibrium EHP; Summary; Acknowledgements; References; Chapter 5. Electron-hole plasma in Ga1-xALxAs: expansion and confinement; References; PART 2: TRANSPORT EFFECTS; Chapter 6. Optical studies of fast plasma transport in Si; Introduction; Optical time-of-flight method; Mott transition based investigation of the electron-hole plasma expansion; Conclusions; References; Chapter 7. Transport of degenerate electron-hole plasmas in Si and Ge.
- 1. Introduction2. Momentum damping of electron-hole liquid; 3. The phonon wind; 4. Phonon-wind driven plasma in silicon; References; Chapter 8. On the investigation of the diffusion processes of photoexcited carriers in siliconby ps-reflectivity measurements; References; Chapter 9. Hot-carrier transient transport; 1. Introduction; 2. Fundamentals of charge transport. The Boltzmann equation; 3. Nonlinear transport-hot carriers; 4. Solution of transport problems- the Monte Carlo method; 5. Transient transport; 6. Diffusion, velocity autocorrelation, and noise; References.
- Chapter 10. New transport phenomena in variable gap semiconductors and their device applications1. Electron velocity measurements in variable gap semiconductors; 2. Impact ionization in graded gap semiconductors and the staircase solid-statephotomultipler; 3. Repeated velocity overshoot devices and electrical polarization effect insawtooth superlattices; References; PART 3: SCREENING OF EXCITONS; Chapter 11. Excitonic versus plasma screening in highly excited gallium arsenide; 1. Introduction; 2. Experiment; 3. Theory; 4. Conclusion; References.