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High excitation and short pulse phenomena : proceedings of the third Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 2-6 July 1984 /
High Excitation and Short Pulse Phenomena.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
North Holland,
1985.
|
| Colección: | Journal of luminescence ;
volume 30, nos. 1-4. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a Trieste ICTP-IUPAP Semiconductor Symposium |n (3rd : |d 1984) | |
| 245 | 1 | 0 | |a High excitation and short pulse phenomena : |b proceedings of the third Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 2-6 July 1984 / |c guest editor M.H. Pilkuhn. |
| 264 | 1 | |a Amsterdam : |b North Holland, |c 1985. | |
| 264 | 2 | |a New York : |b Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co. | |
| 300 | |a 1 online resource (xv, 605 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Journal of luminescence, |x 0022-2313 ; |v volume 30, nos. 1-4 | |
| 500 | |a "Reprinted from Journal of luminescence, volume 30 (1985)"--Title page verso | ||
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; High Excitation and Short Pulse Phenomena; Copyright Page; Preface; Introduction; Table of Contents; PART 1: ELECTRON-HOLE PLASMAS; Chapter 1. Electron-hole plasma generation and evolution in semiconductors; 1. Electron-hole plasma energy; 2. Dielectric constant in the presence of an electron-hole plasma; 3. Generation of an electron-hole plasma by laser beam absorption; 4. Electron-hole plasma evolution; 5. Fascinating melting at T = 0; References; Chapter 2. Non-equilibrium plasma: theory and experiment; 1. Introduction; 2. The system; 3. The homogeneous state. | |
| 505 | 8 | |a 4. Influence of interactions5. The inhomogeneous state; 6. Macroscopic variables; 7. Transport coefficients; 8. Balance equations; 9. Velocities; 10. Conclusions; References; Chapter 3. Plasma expansion and band-gap renormalization in CdTe and GaP; 1. Introduction; 2. Experimental; 3. Renormalized band-gap in GaP; 4. Excite and probe experiment (optical gain); 5. Optical gain and absorption; 6. Luminescence experiments in CdTe; 7. Band-gap renormalization in CdTe; 8. Conclusions; References and footnotes; Chapter 4. Inelastic light scattering in highly excited GaAs; 1. Experimental details. | |
| 505 | 8 | |a 2. Theoretical background3. Experimental results and discussion; 4. Light scattering from non-equilibrium EHP; 5. Density-temperature relation of quasi-equilibrium EHP; Summary; Acknowledgements; References; Chapter 5. Electron-hole plasma in Ga1-xALxAs: expansion and confinement; References; PART 2: TRANSPORT EFFECTS; Chapter 6. Optical studies of fast plasma transport in Si; Introduction; Optical time-of-flight method; Mott transition based investigation of the electron-hole plasma expansion; Conclusions; References; Chapter 7. Transport of degenerate electron-hole plasmas in Si and Ge. | |
| 505 | 8 | |a 1. Introduction2. Momentum damping of electron-hole liquid; 3. The phonon wind; 4. Phonon-wind driven plasma in silicon; References; Chapter 8. On the investigation of the diffusion processes of photoexcited carriers in siliconby ps-reflectivity measurements; References; Chapter 9. Hot-carrier transient transport; 1. Introduction; 2. Fundamentals of charge transport. The Boltzmann equation; 3. Nonlinear transport-hot carriers; 4. Solution of transport problems- the Monte Carlo method; 5. Transient transport; 6. Diffusion, velocity autocorrelation, and noise; References. | |
| 505 | 8 | |a Chapter 10. New transport phenomena in variable gap semiconductors and their device applications1. Electron velocity measurements in variable gap semiconductors; 2. Impact ionization in graded gap semiconductors and the staircase solid-statephotomultipler; 3. Repeated velocity overshoot devices and electrical polarization effect insawtooth superlattices; References; PART 3: SCREENING OF EXCITONS; Chapter 11. Excitonic versus plasma screening in highly excited gallium arsenide; 1. Introduction; 2. Experiment; 3. Theory; 4. Conclusion; References. | |
| 520 | |a High Excitation and Short Pulse Phenomena. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Plasma effects |v Congresses. | |
| 650 | 0 | |a Exciton theory |v Congresses. | |
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| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318281 |x Effets des plasmas sur |0 (CaQQLa)201-0318281 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Excitons |0 (CaQQLa)201-0028165 |v Congr�es. |0 (CaQQLa)201-0378219 | |
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| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
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| 650 | 7 | |a Semiconductors. |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semiconductors |x Plasma effects. |2 fast |0 (OCoLC)fst01112244 | |
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| 655 | 7 | |a Conference papers and proceedings. |2 fast |0 (OCoLC)fst01423772 | |
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| 700 | 1 | |a Pilkuhn, M. H., |d 1934- | |
| 740 | 0 | |a Short pulse phenomena. | |
| 776 | 0 | 8 | |i Print version: |a Trieste ICTP-IUPAP Semiconductor Symposium (3d : 1984). |t High excitation and short pulse phenomena |z 044486931X |w (DLC) 85003018 |w (OCoLC)11756334 |
| 830 | 0 | |a Journal of luminescence ; |v volume 30, nos. 1-4. |x 0022-2313 | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444869319 |z Texto completo |