Semiconductor materials analysis and fabrication process control : proceedings of Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control of the 1992 E-MRS Spring Conference, Strasbourg, France, June 2-5, 1992 /

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The co...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control Strasbourg, France, European Materials Research Society
Otros Autores: Crean, G. M., Stuck, R., Woollam, John A.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam : North-Holland, 1993.
Colección:European Materials Research Society symposia proceedings ; v. 34.
Temas:
Semiconductors > Analysis > Congresses.
Semiconductors > Quality control > Congresses.
Semiconductors > Optical properties > Congresses.
Semi-conducteurs > Analyse > Congr�es.
Semi-conducteurs > Qualit�e > Contr�ole > Congr�es.
Semi-conducteurs > Propri�et�es optiques > Congr�es.
SCIENCE > Physics > Electricity.
Semiconductors > Analysis
Semiconductors > Optical properties
Semiconductors > Quality control
Halbleiter
Herstellung
Kongress
Prozess�uberwachung
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
Strassburg (1992)
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Semiconductor Materials Analysis and Fabrication Process Control; Copyright Page; Preface; Conference Organization; Supporting Organizations and Sponsors; Table of Contents; Chapter 1. In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices; 1. Introduction; 2. Ellipsometry review; 3. SE/MBE system overview; 4. Substrate temperature; 5. Optical constants of AlAs versus temperature; 6. Dynamic growth rate modeling; 7. Quantum well growth; 8. Bragg reflectors; Acknowledgements; References
  • Chapter 2. Insitu spectral ellipsometry for real-time measurement and control1. Background; 2. Spectral ellipsometer; 3. The inverse problem; 4. Process experimental; 5. Results and discussion; 6. Conclusions; Acknowledgements; References; Chapter 3. In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs; 1. Introduction; 2. Experimental apparatus; 3. In situ ellipsometry; 4. Results and discussion; 5. Summary; Acknowledgements; References
  • Chapter 4. Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusions; Acknowledgements; References; Chapter 5. In situ studies of semiconductor processes by spectroellipsometry; 1. Introduction; 2. Experimental details; 3. Representative results; 4. Summary and conclusions; Acknowledgements; References; Chapter 6. Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering; 1. Introduction; 2. Experimental; 3. Evaluation of
  • 4. Results and discussion5. Summary; Acknowledgement; References; Chapter 7. Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusion; Acknowledgements; References; Chapter 8. Round robin investigation of silicon oxide on silicon reference materials for ellipsometry; 1. Introduction; 2. Preparation of the experimental material and measurement procedures; 3. Results and discussion; 4. Conclusions; References
  • Chapter 9. Spectroscopic ellipsometric characterization of Si/Si1-xGex strained-layer supperlattices1. Introduction; 2. Spectroscopic ellipsometry; 3. Experimental results and discussions; 4. Conclusions; Acknowledgement; References; Chapter 10. The influence of nanocrystals on the dielectric function of porous silicon; 1. Introduction; 2. Experimental; 3. Results and discussion; References; Chapter 11. Some examples of depth resolution in SIMS analysis; 1. Introduction; 2. SIMS study of an Fe-Ti multilayer structure with a short period

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