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Semiconductor materials analysis and fabrication process control : proceedings of Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control of the 1992 E-MRS Spring Conference, Strasbourg, France, June 2-5, 1992 /
There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The co...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores Corporativos: | , |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
North-Holland,
1993.
|
| Colección: | European Materials Research Society symposia proceedings ;
v. 34. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control |d (1992 : |c Strasbourg, France) | |
| 245 | 1 | 0 | |a Semiconductor materials analysis and fabrication process control : |b proceedings of Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control of the 1992 E-MRS Spring Conference, Strasbourg, France, June 2-5, 1992 / |c edited by G.M. Crean, R. Stuck, and J.A. Woollam. |
| 260 | |a Amsterdam : |b North-Holland, |c 1993. | ||
| 300 | |a 1 online resource (xiv, 338 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 490 | 1 | |a European Materials Research Society symposia proceedings ; |v v. 34 | |
| 500 | |a "Reprinted from Applied surface science 63"--Title page verso | ||
| 504 | |a Includes bibliographical references and indexes. | ||
| 520 | |a There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Semiconductor Materials Analysis and Fabrication Process Control; Copyright Page; Preface; Conference Organization; Supporting Organizations and Sponsors; Table of Contents; Chapter 1. In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices; 1. Introduction; 2. Ellipsometry review; 3. SE/MBE system overview; 4. Substrate temperature; 5. Optical constants of AlAs versus temperature; 6. Dynamic growth rate modeling; 7. Quantum well growth; 8. Bragg reflectors; Acknowledgements; References | |
| 505 | 8 | |a Chapter 2. Insitu spectral ellipsometry for real-time measurement and control1. Background; 2. Spectral ellipsometer; 3. The inverse problem; 4. Process experimental; 5. Results and discussion; 6. Conclusions; Acknowledgements; References; Chapter 3. In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs; 1. Introduction; 2. Experimental apparatus; 3. In situ ellipsometry; 4. Results and discussion; 5. Summary; Acknowledgements; References | |
| 505 | 8 | |a Chapter 4. Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusions; Acknowledgements; References; Chapter 5. In situ studies of semiconductor processes by spectroellipsometry; 1. Introduction; 2. Experimental details; 3. Representative results; 4. Summary and conclusions; Acknowledgements; References; Chapter 6. Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering; 1. Introduction; 2. Experimental; 3. Evaluation of | |
| 505 | 8 | |a 4. Results and discussion5. Summary; Acknowledgement; References; Chapter 7. Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusion; Acknowledgements; References; Chapter 8. Round robin investigation of silicon oxide on silicon reference materials for ellipsometry; 1. Introduction; 2. Preparation of the experimental material and measurement procedures; 3. Results and discussion; 4. Conclusions; References | |
| 505 | 8 | |a Chapter 9. Spectroscopic ellipsometric characterization of Si/Si1-xGex strained-layer supperlattices1. Introduction; 2. Spectroscopic ellipsometry; 3. Experimental results and discussions; 4. Conclusions; Acknowledgement; References; Chapter 10. The influence of nanocrystals on the dielectric function of porous silicon; 1. Introduction; 2. Experimental; 3. Results and discussion; References; Chapter 11. Some examples of depth resolution in SIMS analysis; 1. Introduction; 2. SIMS study of an Fe-Ti multilayer structure with a short period | |
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |x Analysis |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Quality control |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Optical properties |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0327462 |x Analyse |0 (CaQQLa)201-0327462 |v Congr�es. |0 (CaQQLa)201-0378219 | |
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| 650 | 7 | |a Semiconductors |x Optical properties |2 fast |0 (OCoLC)fst01112243 | |
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| 655 | 7 | |a Strassburg (1992) |2 swd | |
| 700 | 1 | |a Crean, G. M. | |
| 700 | 1 | |a Stuck, R. | |
| 700 | 1 | |a Woollam, John A. | |
| 710 | 2 | |a European Materials Research Society. | |
| 776 | 0 | 8 | |i Print version: |a Symposium D on Diagnostic Techniques for Semiconductor Materials Analysis and Fabrication Process Control (1992 : Strasbourg, France). |t Semiconductor materials analysis and fabrication process control. |d Amsterdam, the Netherlands : North-Holland, 1993 |z 0444899081 |w (DLC) 93155906 |w (OCoLC)185026159 |
| 830 | 0 | |a European Materials Research Society symposia proceedings ; |v v. 34. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444899088 |z Texto completo |