Cargando…
Hydrogen in semiconductors : bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 /
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for r...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam, the Netherlands : New York, NY, USA :
North Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co.,
1991.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn841157118 | ||
| 003 | OCoLC | ||
| 005 | 20231117044853.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130429s1991 ne a ob 101 0 eng d | ||
| 040 | |a OPELS |b eng |e pn |c OPELS |d E7B |d N$T |d OCLCF |d UKDOC |d OCLCQ |d OCLCO |d OCLCQ |d YDXCP |d EBLCP |d DEBSZ |d OCLCO |d OCL |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ |d MERUC |d OCLCQ |d OCLCO |d OCLCA |d LEAUB |d OCLCO |d OCLCQ |d EYM |d OCLCO |d OCLCQ |d OCLCO |d COM |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 855504529 | ||
| 020 | |a 9780444598837 |q (electronic bk.) | ||
| 020 | |a 0444598839 |q (electronic bk.) | ||
| 020 | |z 0444891382 | ||
| 020 | |z 9780444891389 | ||
| 035 | |a (OCoLC)841157118 |z (OCoLC)855504529 | ||
| 050 | 4 | |a QC610.9 |b .T76 1990eb | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 072 | 7 | |a SCI |x 022000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/226 |2 22 |
| 111 | 2 | |a Trieste ICTP-IUPAP Semiconductor Symposium |n (6th : |d 1990) | |
| 245 | 1 | 0 | |a Hydrogen in semiconductors : |b bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 / |c editors, M. Stutzmann, J. Chevallier. |
| 260 | |a Amsterdam, the Netherlands : |b North Holland ; |a New York, NY, USA : |b Sole distributors for the USA and Canada, Elsevier Science Pub. Co., |c 1991. | ||
| 300 | |a 1 online resource (xvii, 581 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 500 | |a "Reprinted from Physica B, volume 170"--Page iv | ||
| 504 | |a Includes bibliographical references and indexes. | ||
| 520 | |a Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Copyright Page; Hydrogen in Semiconductors: Bulk and Surface Properties; Preface; Introduction; In Memory of G�unther Harbeke (Excerpt from A. Frova's Welcome Address); Table of Contents; Chapter 1. General Reviews: Hydrogen in and on Semiconductors; Hydrogen in Crystalline Semiconductors; Theoretical Aspects of Hydrogen in Crystalline Semiconductors; Electronic Structure, Dynamics, and Metastability of Muonium in Semiconductors; Electronic and Structural Properties of Hydrogen on Semiconductor Surfaces; Hydrogen Diffusion and Electronic Metastability in Amorphous Silicon. | |
| 505 | 8 | |a Chapter 2. Hydrogen Diffusion and EffusionHydrogen Diffusion in Crystalline Semiconductors; Hydrogen in Crystalline and Amorphous Silicon; Hydrogen Effusion: A Probe for Surface Desorption and Diffusion; Hydrogen Enhanced Oxygen Diffusion; Electrolytic Hydrogenation of P-Type Silicon Bulk and Surface Modifications; On the Modeling of Hydrogen Diffusion Processes and Complex Formation in P-Type Crystalline Silicon; Modeling of Hydrogen Diffusion in P-Type GaAs:Zn; Modulation and Thermal Stability of Hydrogen in Amorphous Silicon; The Dispersive Diffusion of Hydrogen in Undoped a-Si : H. | |
| 505 | 8 | |a Hydrogen Evolution in Amorphous Silicon CarbideChapter 3. Ydrogen-Related States and Defects; Electron Paramagnetic Resonance of Hydrogen in Silicon; Theory of H Sites in Undoped Crystalline Semiconductors; Metastable States in Si : H; Hydrogen Implantation in Semiconductors; Hydrogen Complexes in Hydrogenated Silicon; Defect Generation during Plasma Treatment of Semiconductors; Evidence for Intrinsic Point Defect Generation during Hydrogen-Plasma Treatment of Silicon; Structure of the (111) Hydrogen Platelet in Silicon. | |
| 505 | 8 | |a Optically Detected Nuclear Magnetic Resonance in Amorphous Silicon Related MaterialsRF Hydrogen Plasma Influence on Shallow and Deep Levels in Crystalline Silicon; Defects in H Implanted GaAs Studied by Ion-Beam and Low-Energy Positron Techniques; States of Hydrogen in Crystalline Silicon; Infrared Analysis of Hydrogen in GaP; The Si-H IR Absorption Bands in NTD FZ (H 2) Si and Their Identification; Hydrogen Complexes and Their Vibrations in Undoped Crystalline Silicon; Evidence for Molecular Hydrogen in Single Crystal Silicon. | |
| 505 | 8 | |a Role of the Hydrogen in the Light-Induced Defects in Undoped Hydrogenated Amorphous SiliconHydrogen Related Effects in a-Si : H Studied by Photothermal Deflection Spectroscopy; Low Energy Ion-Beam Post Hydrogenation of Phosphor Implanted Amorphous Silicon Films; Slow Structural Transitions of Hydrogen in Hydrogenated Amorphous Silicon during Low Temperature Annealing; Structural Changes in a-Si : H during Annealing; The Effects of Hydrogen Dose and Thermal Treatment on the Formation of Microsplits in Hydrogen Implanted GaAs; Chapter 4. Hydrogen Complexes. | |
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Defects |v Congresses. | |
| 650 | 0 | |a Hydrogen |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Congresses. | |
| 650 | 0 | |a Semiconductors |x Defects |x Congresses. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |x Congr�es. |0 (CaQQLa)201-0378208 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318262 |x D�efauts |0 (CaQQLa)201-0318262 |x Congr�es. |0 (CaQQLa)201-0378208 | |
| 650 | 6 | |a Hydrog�ene |0 (CaQQLa)201-0023816 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318262 |x D�efauts |0 (CaQQLa)201-0318262 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Hydrogen |2 fast |0 (OCoLC)fst00964990 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semiconductors |x Defects |2 fast |0 (OCoLC)fst01112211 | |
| 650 | 7 | |a Halbleiter |2 gnd |0 (DE-588)4022993-2 | |
| 650 | 7 | |a Kongress |2 gnd |0 (DE-588)4130470-6 | |
| 650 | 7 | |a Wasserstoff |2 gnd |0 (DE-588)4064784-5 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a proceedings (reports) |2 aat |0 (CStmoGRI)aatgf300027316 | |
| 655 | 7 | |a Conference papers and proceedings |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 655 | 7 | |a Triest (1990) |2 swd | |
| 700 | 1 | |a Stutzmann, M. |q (Martin) | |
| 700 | 1 | |a Chevallier, J. |q (Jacques) | |
| 776 | 0 | 8 | |i Print version: |a Trieste ICTP-IUPAP Semiconductor Symposium (6th : 1990). |t Hydrogen in semiconductors. |d Amsterdam, the Netherlands : North Holland ; New York, NY, USA : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1991 |z 0444891382 |w (DLC) 91004763 |w (OCoLC)23584678 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444891389 |z Texto completo |