Shallow impurity centers in semiconductors : proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 28 July-1 August 1986 /

Shallow Impurity Centers in Semiconductors.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: International Conference on Shallow Impurity Centers International Centre for Theoretical Physics, Trieste ICTP-IUPAP Semiconductor Symposium
Otros Autores: Baldereschi, A., Resta, R.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam : North-Holland, 1987.
Temas:
Semiconductors > Congresses.
Semiconductors > Impurity distribution > Congresses.
Semi-conducteurs > Congr�es.
Semi-conducteurs > Diffusion des impuret�es > Congr�es.
TECHNOLOGY & ENGINEERING > Mechanical.
Semiconductors
Semiconductors > Impurity distribution
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Shallow Impurity Centers in Semiconductors; Copyright Page; Preface; Introduction; Table of Contents; Chapter 1. Shallow impurity states in semiconductors
  • the early years; 1. Introduction; 2. Effective mass theory; 3. Donor states; 4. Acceptor states; 5. Other interesting effects; 6. Reflections, 30+ years later; Acknowledgments; Chapter 2. Spectroscopy of shallow centers in semiconductors: progress since 1960; 1. Introduction; 2. Experimental techniques; 3. Energy levels of donors and acceptors; 4. Piezo- and magneto-spectroscopy; 5. Linewidths of excitation lines.
  • 6. Concluding remarksAcknowledgements; References; Chapter 3. Hydrogen in Si: diffusion and shallow impurity deactivation; 1. Introduction; 2. Passivation techniques; 3. H diffusion and passivation of shallow impurities: experimental results; 4. Hydrogen equilibrium positions and charge states; 5. Hydrogen passivation and diffusion models; 6. Conclusions; Acknowledgements; References; Chapter 4. Spectroscopic studies of double donors in silicon; 1. Introduction; 2. Methods; 3. Photoexcitation spectra of chalcogens; 4. Spin-orbit coupling effects; 5. Fano-resonances; 6. Uniaxial-stress effects.
  • 7. Spin-triplet states8. The magnesium double donor; 9. Summary and conclusions; Acknowledgements; References; Chapter 5. Photoluminescence and infrared absorption studies of double acceptors in germanium; 1. Introduction; 2. Mid-infrared absorption spectroscopy of neutral double acceptors in Ge; 3. Far-infrared BE absorption spectroscopy; 4. Near-infrared spectroscopy; 5. Conclusions; Acknowledgements; References; Chapter 6. Properties of the 78 meV acceptor in GaAs; 1. Introduction; 2. Double acceptors; 3. Experimental studies; 4. Discussion; References.
  • Chapter 7. Absorption strengths in the far-IR spectrum of shallow donors and acceptors in germanium1. Introduction; 2. Calibration of the absorption; 3. Calculation of the oscillator strengths; 4. Influence of compensation on the absorption line intensities; 5. Conclusions; Acknowledgement; References; Chapter 8. Zeeman spectroscopy of impurities in stress-induced uniaxial germanium; Acknowledgements; References; Chapter 9. Spectroscopic studies of the local symmetry of nitrogen pairs in GaP; 1. Introduction; 2. Symmetry considerations; 3. Excitonic Hamiltonian; 4. Qualitative features.
  • 5. Discussion6. Conclusion; Acknowledgements; References; Chapter 10. Shallow impurity interactions and the metal-insulator transition; 1. Introduction; 2. The lattice of hydrogen atoms; 3. Optical response for a random distribution; 4. Dielectric behavior; 5. One-electron density of states; 6. Magnetic behavior; 7. Concluding remarks; Acknowledgments; References; Chapter 11. Optical studies of shallow impurities in semiconductor quantum well structures; 1. Introduction; 2. Binding energy of hydrogenic impurities in QW structures.

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