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Shallow impurity centers in semiconductors : proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 28 July-1 August 1986 /
Shallow Impurity Centers in Semiconductors.
| Clasificación: | Libro Electrónico |
|---|---|
| Autores Corporativos: | , |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
North-Holland,
1987.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Conference on Shallow Impurity Centers |n (2nd : |d 1986 : |c International Centre for Theoretical Physics) | |
| 245 | 1 | 0 | |a Shallow impurity centers in semiconductors : |b proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 28 July-1 August 1986 / |c editors, A. Baldereschi, R. Resta. |
| 260 | |a Amsterdam : |b North-Holland, |c 1987. | ||
| 300 | |a 1 online resource (xii, 305 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 500 | |a "Reprinted from Physica B vol. 146B 1987 nos. 1 & 2"--Title page verso | ||
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Shallow Impurity Centers in Semiconductors; Copyright Page; Preface; Introduction; Table of Contents; Chapter 1. Shallow impurity states in semiconductors -- the early years; 1. Introduction; 2. Effective mass theory; 3. Donor states; 4. Acceptor states; 5. Other interesting effects; 6. Reflections, 30+ years later; Acknowledgments; Chapter 2. Spectroscopy of shallow centers in semiconductors: progress since 1960; 1. Introduction; 2. Experimental techniques; 3. Energy levels of donors and acceptors; 4. Piezo- and magneto-spectroscopy; 5. Linewidths of excitation lines. | |
| 505 | 8 | |a 6. Concluding remarksAcknowledgements; References; Chapter 3. Hydrogen in Si: diffusion and shallow impurity deactivation; 1. Introduction; 2. Passivation techniques; 3. H diffusion and passivation of shallow impurities: experimental results; 4. Hydrogen equilibrium positions and charge states; 5. Hydrogen passivation and diffusion models; 6. Conclusions; Acknowledgements; References; Chapter 4. Spectroscopic studies of double donors in silicon; 1. Introduction; 2. Methods; 3. Photoexcitation spectra of chalcogens; 4. Spin-orbit coupling effects; 5. Fano-resonances; 6. Uniaxial-stress effects. | |
| 505 | 8 | |a 7. Spin-triplet states8. The magnesium double donor; 9. Summary and conclusions; Acknowledgements; References; Chapter 5. Photoluminescence and infrared absorption studies of double acceptors in germanium; 1. Introduction; 2. Mid-infrared absorption spectroscopy of neutral double acceptors in Ge; 3. Far-infrared BE absorption spectroscopy; 4. Near-infrared spectroscopy; 5. Conclusions; Acknowledgements; References; Chapter 6. Properties of the 78 meV acceptor in GaAs; 1. Introduction; 2. Double acceptors; 3. Experimental studies; 4. Discussion; References. | |
| 505 | 8 | |a Chapter 7. Absorption strengths in the far-IR spectrum of shallow donors and acceptors in germanium1. Introduction; 2. Calibration of the absorption; 3. Calculation of the oscillator strengths; 4. Influence of compensation on the absorption line intensities; 5. Conclusions; Acknowledgement; References; Chapter 8. Zeeman spectroscopy of impurities in stress-induced uniaxial germanium; Acknowledgements; References; Chapter 9. Spectroscopic studies of the local symmetry of nitrogen pairs in GaP; 1. Introduction; 2. Symmetry considerations; 3. Excitonic Hamiltonian; 4. Qualitative features. | |
| 505 | 8 | |a 5. Discussion6. Conclusion; Acknowledgements; References; Chapter 10. Shallow impurity interactions and the metal-insulator transition; 1. Introduction; 2. The lattice of hydrogen atoms; 3. Optical response for a random distribution; 4. Dielectric behavior; 5. One-electron density of states; 6. Magnetic behavior; 7. Concluding remarks; Acknowledgments; References; Chapter 11. Optical studies of shallow impurities in semiconductor quantum well structures; 1. Introduction; 2. Binding energy of hydrogenic impurities in QW structures. | |
| 520 | |a Shallow Impurity Centers in Semiconductors. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Impurity distribution |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318273 |x Diffusion des impuret�es |0 (CaQQLa)201-0318273 |v Congr�es. |0 (CaQQLa)201-0378219 | |
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| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semiconductors |x Impurity distribution |2 fast |0 (OCoLC)fst01112226 | |
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| 700 | 1 | |a Baldereschi, A. | |
| 700 | 1 | |a Resta, R. | |
| 711 | 2 | |a Trieste ICTP-IUPAP Semiconductor Symposium |n (4th : |d 1986 : |c International Centre for Theoretical Physics) | |
| 730 | 0 | |a Physica B + C. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Shallow Impurity Centers (2nd : 1986 : International Centre for Theoretical Physics). |t Shallow impurity centers in semiconductors. |d Amsterdam : North-Holland, 1987 |z 0444870873 |w (OCoLC)17787081 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444870872 |z Texto completo |