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Hot carriers in semiconductor nanostructures : physics and applications /
Nonequilibrium--hot--charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book--one of the first on the topic--discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor de...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1992.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Hot Carriers In Semiconductor Nanostructures: Physics and Applications; Copyright Page; Table of Contents; Preface; Contributors; Part I: Overview; Chapter I.1. Overview; 1. Introduction; 2. Fundamental Aspects of Quasi-2D Systems; 3. Monte Carlo Simulations; 4. Optical Studies of Hot Carriers in Semiconductor Nanostructures; 5. Transport Studies and Devices; 6. Summary; References; Part II: Fundamental Theory; Chapter II.l. Electron-Phonon Interactions in 2D Systems; 1. Introduction; 2. Quantum Confinement.; 3. The Electron-Phonon Scattering Rate.
- 4. Model Rates for the Fr�ohlich Interaction5. Scattering by Acoustic Phonons; 6. Concluding Remarks; References; Chapter II. 2. Quantum Many-Body Aspects of Hot-Carrier Relaxation in Semiconductor Microstructures; 1. Introduction; 2. Energy Relaxation of an Excited Electron Gas; 3. Single-Particle Inelastic Lifetime; 4. Conclusion; Acknowledgments; References; Chapter II. 3. Cooling of Highly Photoexcited Electron-Hole Plasma in Polar Semiconductors and Semiconductor Quantum Wells:A Balance-Equation Approach; 1. Carrier Cooling in Bulk Polar Semiconductors.
- 2. Carrier Cooling in Quantum-Well Structures3. Summary and Conclusions; References; Chapter II. 4. Tunneling Times in Semiconductor Heterostructures: A Critical Review; 1. Introduction; 2. Phase Time, Dwell Time, B�uttiker-Landauer Time, Larmor Times, and Complex Times; 3. Analysis and Domain of Validity of the Proposed Tunneling Times; 4. Experimental Methods for Determining Tunneling Times; Acknowledgments; References; Chapter II. 5. Quantum Transport; 1. Introduction; 2. The General Problem and the Various Approaches; 3. Applications; 4. Conclusions; References.
- Part III: Monte Carlo SimulationsChapter III.l. Hot-Carrier Relaxation in Quasi-2D Systems; 1. Introduction; 2. Scattering in Quasi-2D Systems; 3. Monte Carlo Simulation; 4. Analysis of Experimental Results; 5. Summary and Conclusions; Acknowledgments; References; Chapter III. 2. Monte Carlo Simulation of GaAs-AlxGa1_xAs Field-Effect Transistors; 1. Introduction; 2. Ensemble Monte Carlo Device Model; 3. Nonstationary Transport and Scaling of modfets; 4. Physics of Real-Space Transfer Transistors; 5. Extended Drift-Diffusion Formalism; 6. Conclusions; Acknowledgments; References.
- Part IV: Optical StudiesChapter IV.l. Ultrafast Luminescence Studies of Carrier Relaxation and Tunneling in Semiconductor Nanostructures; 1. Introduction; 2. Ultrafast Luminescence Studies of Carrier Relaxation; 3. Ultrafast Luminescence Studies of Tunneling in Semiconductor Nanostructures; 4. Summary; Acknowledgments; References; Chapter IV. 2. Optical Studies of Femtosecond Carrier Thermalization in GaAs; 1. Introduction; 2. Experimental Methods; 3. Experimental Results; 4. Theoretical Approaches; 5. Conclusion; Acknowledgments; References.