Ion implantation : science and technology /

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Ion Implantation Science and Technology 2e.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Ziegler, J. F. (James F.)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Boston : Academic Press, �1988.
Edición:2nd ed.
Temas:
Ion implantation.
Ions > Implantation.
SCIENCE > Physics > Atomic & Molecular.
Ion implantation
Aufsatzsammlung
Ionenimplantation
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Ion Implantation Science and Technology: Second Edition; Copyright Page; Table of Contents; Contributors; Preface; Part I: Ion Implantation Science; CHAPTER 1. THE STOPPING AND RANGE OF IONS IN SOLIDS; 1
  • INTRODUCTION AND HISTORICAL REVIEW; 2
  • NUCLEAR STOPPING CROSS-SECTIONS; 3
  • ELECTRONIC STOPPING CROSS-SECTIONS; 4
  • TRIM CALCULATIONS OF RANGE DISTRIBUTIONS; TEXT REFERENCES; CHAPTER 2. ION IMPLANTATION DAMAGE IN SILICON*; 1. INTRODUCTION; 2. CHARACTERIZATION OF DAMAGE AND DEFECTS; 3. PRIMARY IMPLANTATION DAMAGE; 4. DEFECT REACTIONS; 5. THERMAL ANNEALING; 6. RESIDUAL DEFECTS.
  • 7. effects of residual defectsacknowledgements; references; chapter 3. experimental annealing and activation; abstracts; i. introduction; ii. low and medium dose implants; iii. electrical activity for high dose implantation; iv. extreme low energy implantation; v. high energy implantation; vi. solid state chemical reactions on implanted surfaces; vii. implantation, defects and gettering effect; viii. defect aspects of indirect beam effects; ix. annealing strategy; rapid annealing techniques; x. conclusions; xi. acknowledgements; xii. references; chapter 4. measurement of ion implantation.
  • 1. INTRODUCTION2. BACKGROUND; 3. ELECTRICAL ACTIVITY IN SEMICONDUCTORS; 4. EVALUATION TECHNIQUES; 5. NEW PROBLEMS AND NEW SOLUTIONS; 6. CONCLUDING REMARKS; ACKNOWLEDGEMENTS; REFERENCES; Part II: Ion Implantation Technology; CHAPTER 5. An INTRODUCTION TO ION SOURCES; 1. INTRODUCTION AND REVISION; 2. PHYSICAL PROCESSES OF ION PRODUCTION; 3. ELECTRICAL BREAKDOWN OF A GAS; 4. THE GAS PLASMA AND EXTRACTION FROM IT; 5. TYPICAL ION SOURCES IN COMMON USE; 6. BEAM QUALITY AND CONTROL; 7. CONCLUDING REMARKS; REFERENCES; CHAPTER 6. ION OPTICS AND FOCUSSING IN IMPLANTER DESIGN; FOCUSSING.
  • MAGNETIC ELEMENTSTHE FOCUSSING USED IN THE IONEX 1X1500 MeV IMPLANTER; REFERENCE LIST; CHAPTER 7. Wafer Cooling, Faraday Design and Wafer Charging; 1. INTRODUCTION; 2. WAFER COOLING; 3. FARADAY SYSTEMS AND DOSE CONTROL; 4. WAFER CHARGING AND CHARGE NEUTRALIZATION; REFERENCES; CHAPTER 8. PHOTORESIST PROBLEMS AND PARTICLE CONTAMINATION; 1.0 INTRODUCTION; 2.0 PHOTORESIST PROBLEMS; 3.0 PARTICLE CONTAMINATION; 4.0 REFERENCES; CHAPTER 9. Ion Implantation Diagnostics and Process Control; A. Introduction; B. Process Control Concepts; C. Measurement Tools; D. Spatial Resolution.
  • E. Examples of Implant Process DiagnosticsF. Dose Accuracy Surveys; G. Summary; References:; CHAPTER 10. SAFETY CONSIDERATIONS FOR ION IMPLANTERS; 1. INTRODUCTION; 2. HIGH VOLTAGE; 3. RADIATION; 4. TOXIC SUBSTANCES; REFERENCES; CHAPTER 11. EMISSION OF IONIZING RADIATION FROM ION IMPLANTERS; ABSTRACT; 1. INTROD�UCTIOI; 2. PRODUCTION OF IONIZING RADIATION; 3. IMPLANTER LAYOUT AND OPERATION; 4. DEPENDENCE OF RADIATION PRODUCTION ON OPERATING CONDITIONS; 5. METHODS OF RADIATION REDUCTION; 6. SHIEIDING CONSIDERATIONS; 7. ENGINEERING FOR RADIATION CONTROL.

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