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Ion implantation : science and technology /
Ion Implantation Science and Technology 2e.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1988.
|
| Edición: | 2nd ed. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 001 | SCIDIR_ocn838123998 | ||
| 003 | OCoLC | ||
| 005 | 20231117044847.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130411s1988 maua ob 001 0 eng d | ||
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| 019 | |a 850152270 |a 1162318356 | ||
| 020 | |a 9780323161657 |q (electronic bk.) | ||
| 020 | |a 0323161650 |q (electronic bk.) | ||
| 020 | |z 0127806210 | ||
| 020 | |z 9780127806211 | ||
| 035 | |a (OCoLC)838123998 |z (OCoLC)850152270 |z (OCoLC)1162318356 | ||
| 050 | 4 | |a QC702.7.I55 |b I59 1988eb | |
| 072 | 7 | |a SCI |x 074000 |2 bisacsh | |
| 082 | 0 | 4 | |a 539/.6 |2 22 |
| 084 | |a UP 9350 |2 rvk | ||
| 245 | 0 | 0 | |a Ion implantation : |b science and technology / |c edited by J.F. Ziegler. |
| 250 | |a 2nd ed. | ||
| 260 | |a Boston : |b Academic Press, |c �1988. | ||
| 300 | |a 1 online resource (ix, 498 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Ion Implantation Science and Technology: Second Edition; Copyright Page; Table of Contents; Contributors; Preface; Part I: Ion Implantation Science; CHAPTER 1. THE STOPPING AND RANGE OF IONS IN SOLIDS; 1 -- INTRODUCTION AND HISTORICAL REVIEW; 2 -- NUCLEAR STOPPING CROSS-SECTIONS; 3 -- ELECTRONIC STOPPING CROSS-SECTIONS; 4 -- TRIM CALCULATIONS OF RANGE DISTRIBUTIONS; TEXT REFERENCES; CHAPTER 2. ION IMPLANTATION DAMAGE IN SILICON*; 1. INTRODUCTION; 2. CHARACTERIZATION OF DAMAGE AND DEFECTS; 3. PRIMARY IMPLANTATION DAMAGE; 4. DEFECT REACTIONS; 5. THERMAL ANNEALING; 6. RESIDUAL DEFECTS. | |
| 505 | 8 | |a 7. effects of residual defectsacknowledgements; references; chapter 3. experimental annealing and activation; abstracts; i. introduction; ii. low and medium dose implants; iii. electrical activity for high dose implantation; iv. extreme low energy implantation; v. high energy implantation; vi. solid state chemical reactions on implanted surfaces; vii. implantation, defects and gettering effect; viii. defect aspects of indirect beam effects; ix. annealing strategy; rapid annealing techniques; x. conclusions; xi. acknowledgements; xii. references; chapter 4. measurement of ion implantation. | |
| 505 | 8 | |a 1. INTRODUCTION2. BACKGROUND; 3. ELECTRICAL ACTIVITY IN SEMICONDUCTORS; 4. EVALUATION TECHNIQUES; 5. NEW PROBLEMS AND NEW SOLUTIONS; 6. CONCLUDING REMARKS; ACKNOWLEDGEMENTS; REFERENCES; Part II: Ion Implantation Technology; CHAPTER 5. An INTRODUCTION TO ION SOURCES; 1. INTRODUCTION AND REVISION; 2. PHYSICAL PROCESSES OF ION PRODUCTION; 3. ELECTRICAL BREAKDOWN OF A GAS; 4. THE GAS PLASMA AND EXTRACTION FROM IT; 5. TYPICAL ION SOURCES IN COMMON USE; 6. BEAM QUALITY AND CONTROL; 7. CONCLUDING REMARKS; REFERENCES; CHAPTER 6. ION OPTICS AND FOCUSSING IN IMPLANTER DESIGN; FOCUSSING. | |
| 505 | 8 | |a MAGNETIC ELEMENTSTHE FOCUSSING USED IN THE IONEX 1X1500 MeV IMPLANTER; REFERENCE LIST; CHAPTER 7. Wafer Cooling, Faraday Design and Wafer Charging; 1. INTRODUCTION; 2. WAFER COOLING; 3. FARADAY SYSTEMS AND DOSE CONTROL; 4. WAFER CHARGING AND CHARGE NEUTRALIZATION; REFERENCES; CHAPTER 8. PHOTORESIST PROBLEMS AND PARTICLE CONTAMINATION; 1.0 INTRODUCTION; 2.0 PHOTORESIST PROBLEMS; 3.0 PARTICLE CONTAMINATION; 4.0 REFERENCES; CHAPTER 9. Ion Implantation Diagnostics and Process Control; A. Introduction; B. Process Control Concepts; C. Measurement Tools; D. Spatial Resolution. | |
| 505 | 8 | |a E. Examples of Implant Process DiagnosticsF. Dose Accuracy Surveys; G. Summary; References:; CHAPTER 10. SAFETY CONSIDERATIONS FOR ION IMPLANTERS; 1. INTRODUCTION; 2. HIGH VOLTAGE; 3. RADIATION; 4. TOXIC SUBSTANCES; REFERENCES; CHAPTER 11. EMISSION OF IONIZING RADIATION FROM ION IMPLANTERS; ABSTRACT; 1. INTROD�UCTIOI; 2. PRODUCTION OF IONIZING RADIATION; 3. IMPLANTER LAYOUT AND OPERATION; 4. DEPENDENCE OF RADIATION PRODUCTION ON OPERATING CONDITIONS; 5. METHODS OF RADIATION REDUCTION; 6. SHIEIDING CONSIDERATIONS; 7. ENGINEERING FOR RADIATION CONTROL. | |
| 520 | |a Ion Implantation Science and Technology 2e. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Ion implantation. | |
| 650 | 6 | |a Ions |x Implantation. |0 (CaQQLa)201-0072132 | |
| 650 | 7 | |a SCIENCE |x Physics |x Atomic & Molecular. |2 bisacsh | |
| 650 | 7 | |a Ion implantation |2 fast |0 (OCoLC)fst00978590 | |
| 650 | 7 | |a Aufsatzsammlung |2 gnd |0 (DE-588)4143413-4 | |
| 650 | 7 | |a Ionenimplantation |2 gnd |0 (DE-588)4027606-5 | |
| 700 | 1 | |a Ziegler, J. F. |q (James F.) | |
| 776 | 0 | 8 | |i Print version: |t Ion implantation. |b 2nd ed. |d Boston : Academic Press, �1988 |z 0127806210 |w (DLC) 88006382 |w (OCoLC)17733044 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127806211 |z Texto completo |