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Nonradiative recombination in semiconductors /
In recent years, great progress has been made in the understanding of recombination processes controlling the number of excess free carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensive theoretical description of these processes. The auth...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés Ruso |
| Publicado: |
Amsterdam ; New York : New York, NY, USA :
North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co.,
1991.
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| Colección: | Modern problems in condensed matter sciences ;
v. 33. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
| Sumario: | In recent years, great progress has been made in the understanding of recombination processes controlling the number of excess free carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensive theoretical description of these processes. The authors have selected a number of experimental results which elucidate the underlying physical problems and enable a test of theoretical models. The following topics are dealt with: phenomenological theory of recombination, theoretical models of shallow and deep localized states, cascade model of carrier capture by impurity centers, capture restricted by diffusion, multiphonon processes, Auger processes, effect of electric field on capture and thermal emission of carriers. |
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| Notas: | Translated from the Russian. |
| Descripción Física: | 1 online resource (xvi, 320 pages) : illustrations |
| Bibliografía: | Includes bibliographical references (pages 283-293) and indexes. |
| ISBN: | 9780444600820 0444600825 |