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Electron-Electron Interactions in Disordered Systems /
``Electron-Electron Interactions in Disordered Systems'' deals with the interplay of disorder and the Coulomb interaction. Prominent experts give state-of-the-art reviews of the theoretical and experimental work in this field and make it clear that the interplay of the two effects is essen...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Elsevier Science,
1985.
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| Colección: | Modern problems in condensed matter sciences.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Electron-Electron Intractions in Disordered Systems; Copyright Page; PREFACE TO THE SERIES; INTRODUCTION; Table of Contents; CHAPTER 1. Electron-Electron Interaction In Disordered Conductors; Contents; 1. Introduction; 2. Noninteracting electrons in disordered metal systems; 3. Effect of electron-electron interaction on the one-particle density of states and thermodynamic properties of disordered conductors; 4. The electron-electron collision and phase relaxation times; 5. Electron-electron interaction and the kinetics in disordered conductors.
- 6. The influence of magnetic field and spin scattering on the electron interaction effects7. The anisotropy and intervalley scattering effects; 8. Comparison of theory with experiment; 9. The metal-insulator phase transition with the inclusion of electron interaction; 10. Conclusion; Acknowledgements; Appendix 1; Appendix 2; Appendix 3; Appendix 4; References; CHAPTER 2. Interaction Effects in the Weakly Localized Regime of Two- and Three-Dimensional Disordered Systems; Contents; List of symbols; 1. Introduction; 2. Definition of the weakly localized regime.
- 3. Quantum corrections to conductivity in non-interacting systems4. Interaction effects: lowest order; 5. Inelastic scattering time; 6. Higher order effects; 7. Effects of localization on superconductivity; 8. Kondo effects; 9. Comparison with experiments; 10. Summary; Acknowledgements; References; CHAPTER 3. A Review of the Metal-Insulator Transition in Doped Semiconductors; Contents; List of symbols; Part I: General overview; 1. Introduction; 2. Optical properties of doped semiconductors; 3. Transport properties; 4. Magnetic properties; Part II: ""Tuning"" the MI transition.
- 7. The conductivity story8. Tuning the metal-insulator transition; 9. Tuning nc in practice: Squeezing at low temperature; 10. Tuning with magnetic field; 11. Concluding remarks; References; CHAPTER 4. The Effect of Coulomb Interactions on Electronic States And Transport In Disordered Insulators; Contents; List of symbols; 1. Introductory sections; 2. A qualitative discussion of the Coulomb effects; 3. The Coulomb gap; 4. Correlated motion of carriers; 5. The experimental situation; References; CHAPTER 5. Coulomb Interaction In Disordered Systems With Localized Electronic States; Contents.
- 1. Introduction-Physical systems and models2. Coulomb gap and variable range hopping; 3. Dipole excitations and polarons; 4. Influence of electron-electron interaction on relaxation losses; 5. Effect of electron-electron interaction on the phononless hopping a.c. conductivity; Appendix: Program for minimization of the total energyand calculation of the density of states; References; CHAPTER 6. H� -Like Impurity Centers, Molecular Complexes and Electron Derealization in Semiconductors; Contents; List of symbols and abbreviations; 1. Introduction; 2. Isolated H-like centers in semiconductors.