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130311s1996 ne a ob 101 0 eng d |
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|a 932347218
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|a 9780444599742
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|z 0444823344
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|z 9780444823342
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|a (OCoLC)829713525
|z (OCoLC)932347218
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| 050 |
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4 |
|a TA418.6
|b .I555 1995eb
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|a 621.3815/2
|2 22
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| 111 |
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|a International Conference on Ion Beam Modification of Materials
|n (9th :
|d 1995 :
|c Canberra, A.C.T.)
|
| 245 |
1 |
0 |
|a Ion beam modification of materials :
|b proceedings of the ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February, 1995 /
|c editors, J.S. Williams, R.G. Elliman, M.C. Ridgway.
|
| 260 |
|
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|a Amsterdam ;
|a New York :
|b Elsevier Science,
|c 1996.
|
| 300 |
|
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|a 1 online resource (xix, 1136 pages) :
|b illustrations
|
| 336 |
|
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|a text
|b txt
|2 rdacontent
|
| 337 |
|
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|a computer
|b c
|2 rdamedia
|
| 338 |
|
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|a online resource
|b cr
|2 rdacarrier
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| 504 |
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|a Includes bibliographical references and index.
|
| 588 |
0 |
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|a Print version record.
|
| 505 |
0 |
|
|a pt. I, section I. Basic processes ; section II. Low energy processes ; section III. Defect formation and annealing of semiconductors ; section IV. Semiconductor processing, devices and optical materials ; section V. Modification of non-semiconductor materials ; section VI. Novel processing : applications and techniques -- pt. II, section A. Basic processes ; section B. Low-energy processes ; section C. Defect formation and annealing of semiconductors ; section D. Semiconductor processing, devices and optical materials ; section E. Modification of non-semiconductor materials ; section F. Novel processing : applications and techniques.
|
| 650 |
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0 |
|a Materials
|x Effect of radiation on
|v Congresses.
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| 650 |
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|a Ion bombardment
|v Congresses.
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| 650 |
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0 |
|a Electronics
|x Materials
|x Effect of radiation on
|v Congresses.
|
| 650 |
|
6 |
|a Mat�eriaux
|0 (CaQQLa)201-0065310
|x Effets du rayonnement sur
|0 (CaQQLa)201-0065310
|v Congr�es.
|0 (CaQQLa)201-0378219
|
| 650 |
|
6 |
|a Bombardement ionique
|0 (CaQQLa)201-0004234
|v Congr�es.
|0 (CaQQLa)201-0378219
|
| 650 |
|
6 |
|a �Electronique
|0 (CaQQLa)201-0016374
|x Mat�eriaux
|0 (CaQQLa)201-0016374
|x Effets du rayonnement sur
|0 (CaQQLa)000274318
|v Congr�es.
|0 (CaQQLa)201-0378219
|
| 650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Semiconductors.
|2 bisacsh
|
| 650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Solid State.
|2 bisacsh
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| 650 |
|
7 |
|a Electronics
|x Materials
|x Effect of radiation on
|2 fast
|0 (OCoLC)fst00907565
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| 650 |
|
7 |
|a Ion bombardment
|2 fast
|0 (OCoLC)fst00978567
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| 650 |
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7 |
|a Materials
|x Effect of radiation on
|2 fast
|0 (OCoLC)fst01011816
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| 655 |
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2 |
|a Congress
|0 (DNLM)D016423
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| 655 |
|
7 |
|a proceedings (reports)
|2 aat
|0 (CStmoGRI)aatgf300027316
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| 655 |
|
7 |
|a Conference papers and proceedings
|2 fast
|0 (OCoLC)fst01423772
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| 655 |
|
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|a Conference papers and proceedings.
|2 lcgft
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| 655 |
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|a Actes de congr�es.
|2 rvmgf
|0 (CaQQLa)RVMGF-000001049
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| 700 |
1 |
|
|a Williams, James S.
|q (James Stanislaus),
|d 1948-
|
| 700 |
1 |
|
|a Elliman, R. G.
|q (Rob G.)
|
| 700 |
1 |
|
|a Ridgway, M. C.
|q (Mark C.)
|
| 776 |
0 |
8 |
|i Print version:
|a International Conference on Ion Beam Modification of Materials (9th : 1995 : Canberra, A.C.T.).
|t Ion beam modification of materials.
|d Amsterdam ; New York : Elsevier Science, 1996
|z 0444823344
|w (DLC) 96006750
|w (OCoLC)34281645
|
| 856 |
4 |
0 |
|u https://sciencedirect.uam.elogim.com/science/book/9780444823342
|z Texto completo
|
